SI1315DL-T1-GE3 Vishay, SI1315DL-T1-GE3 Datasheet - Page 6

• Manufacturer Part Number: SI1315DL-T1-GE3
• Description: MOSFET P-CH 8V 900MA SC70-3
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI1315DL-T1-GE3

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 336 mOhm @ 800mA, 4.5V
• Drain To Source Voltage (vdss): 8V
• Current - Continuous Drain (id) @ 25° C: 900mA
• Vgs(th) (max) @ Id: 800mV @ 250µA
• Gate Charge (qg) @ Vgs: 3.4nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 112pF @ 4V
• Power - Max: 400mW
• Mounting Type: Surface Mount
• Package / Case: SC-70, SOT-323
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

Si1315DL
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?67193.
www.vishay.com
6
0.01
0.01
0.1
0.1
1
1
10
10
-4
-4
0.05
0.2
Duty Cycle = 0.5
0.02
0.1
0.1
Duty Cycle = 0.5
0.2
Single Pulse
Single Pulse
10
-3
0.02
Normalized Thermal Transient Impedance, Junction-to-Ambient
Normalized Thermal Transient Impedance, Junction-to-Foot
10
0.05
-3
10
-2
Square Wave Pulse Duration (s)
Square Wave Pulse Duration (s)
10
-1
10
-2
1
10
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
10
P
DM
-1
JM
- T
t
A
1
S10-2765-Rev. A, 29-Nov-10
= P
t
2
Document Number: 67193
DM
100
Z
thJA
thJA
t
t
1
2
(t)
= 430 °C/W
1000
1