SI1315DL-T1-GE3 Vishay, SI1315DL-T1-GE3 Datasheet - Page 10

• Manufacturer Part Number: SI1315DL-T1-GE3
• Description: MOSFET P-CH 8V 900MA SC70-3
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI1315DL-T1-GE3

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 336 mOhm @ 800mA, 4.5V
• Drain To Source Voltage (vdss): 8V
• Current - Continuous Drain (id) @ 25° C: 900mA
• Vgs(th) (max) @ Id: 800mV @ 250µA
• Gate Charge (qg) @ Vgs: 3.4nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 112pF @ 4V
• Power - Max: 400mW
• Mounting Type: Surface Mount
• Package / Case: SC-70, SOT-323
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

RECOMMENDED MINIMUM PADS FOR SC-70: 3-Lead
Document Number: 72601
Revision: 21-Jan-08
Return to Index
Return to Index
(0.622)
Recommended Minimum Pads
0.025
Dimensions in Inches/(mm)
(0.686)
(1.803)
0.027
0.071
(0.559)
0.022
Application Note 826
Vishay Siliconix
www.vishay.com
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