SI1315DL-T1-GE3 Vishay, SI1315DL-T1-GE3 Datasheet - Page 4

• Manufacturer Part Number: SI1315DL-T1-GE3
• Description: MOSFET P-CH 8V 900MA SC70-3
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI1315DL-T1-GE3

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 336 mOhm @ 800mA, 4.5V
• Drain To Source Voltage (vdss): 8V
• Current - Continuous Drain (id) @ 25° C: 900mA
• Vgs(th) (max) @ Id: 800mV @ 250µA
• Gate Charge (qg) @ Vgs: 3.4nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 112pF @ 4V
• Power - Max: 400mW
• Mounting Type: Surface Mount
• Package / Case: SC-70, SOT-323
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

Si1315DL
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
www.vishay.com
4
0.85
0.75
0.65
0.55
0.45
0.35
0.1
10
1
- 50
0
- 25
Source-Drain Diode Forward Voltage
V
0.35
SD
0
- Source-to-Drain Voltage (V)
Threshold Voltage
T
J
25
- Temperature (°C)
T
J
= 150 °C
0.70
50
I
D
= 250 μA
75
0.01
0.1
10
1
0.1
1.05
100
T
Safe Operating Area, Junction-to-Ambient
J
* V
Limited by R
Single Pulse
= 25 °C
T
GS
A
125
= 25 °C
> minimum V
V
DS
150
1.40
- Drain-to-Source Voltage (V)
DS(on) *
BVDSS Limited
1
GS
at which R
DS(on)
10
1 ms
10 ms
100 ms
1 s
10 s, DC
is specified
0.8
0.6
0.4
0.2
0
0.001
8
6
4
2
0
0
Single Pulse Power, Junction-to-Ambient
On-Resistance vs. Gate-to-Source Voltage
100
0.01
V
2
GS
- Gate-to-Source Voltage (V)
T
T
0.1
J
J
= 125 °C
= 25 °C
Time (s)
4
S10-2765-Rev. A, 29-Nov-10
Document Number: 67193
1
I
D
= 0.8 A
6
10
100
8