SI1315DL-T1-GE3 Vishay, SI1315DL-T1-GE3 Datasheet - Page 3

• Manufacturer Part Number: SI1315DL-T1-GE3
• Description: MOSFET P-CH 8V 900MA SC70-3
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI1315DL-T1-GE3

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 336 mOhm @ 800mA, 4.5V
• Drain To Source Voltage (vdss): 8V
• Current - Continuous Drain (id) @ 25° C: 900mA
• Vgs(th) (max) @ Id: 800mV @ 250µA
• Gate Charge (qg) @ Vgs: 3.4nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 112pF @ 4V
• Power - Max: 400mW
• Mounting Type: Surface Mount
• Package / Case: SC-70, SOT-323
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Document Number: 67193
S10-2765-Rev. A, 29-Nov-10
0.60
0.52
0.44
0.36
0.28
0.20
4.5
3.6
2.7
1.8
0.9
0.0
3.0
2.4
1.8
1.2
0.6
0.0
0.0
0.0
0.0
V
GS
I
D
= 0.8 A
= 1.8 V
0.3
On-Resistance vs. Drain Current
0.6
V
0.5
V
DS
Output Characteristics
DS
Q
- Drain-to-Source Voltage (V)
g
0.6
I
= 2 V
- Total Gate Charge (nC)
D
Gate Charge
- Drain Current (A)
1.2
V
DS
= 4 V
0.9
1.0
1.8
V
1.2
GS
V
V
V
DS
GS
GS
= 5 V thru 2.5 V
1.5
= 6.4 V
= 2.5 V
= 4.5 V
2.4
V
V
V
V
GS
GS
1.5
GS
GS
= 1.8 V
= 1.5 V
= 2 V
= 1 V
3.0
1.8
2.0
200
150
100
0.5
0.4
0.3
0.2
0.1
0.0
1.5
1.3
1.1
0.9
0.7
50
0
- 50
0.0
0
On-Resistance vs. Junction Temperature
- 25
I
D
= 0.8 A
0.3
V
V
GS
Transfer Characteristics
DS
2
0
T
J
- Gate-to-Source Voltage (V)
- Drain-to-Source Voltage (V)
- Junction Temperature (°C)
T
C
C
C
25
Capacitance
rss
= 125 °C
0.6
iss
C
oss
T
C
50
4
= 25 °C
Vishay Siliconix
V
0.9
GS
75
= 2.5 V
Si1315DL
T
100
6
V
C
www.vishay.com
1.2
GS
= - 55 °C
= 4.5 V
125
1.5
150
8
3