SI1315DL-T1-GE3 Vishay, SI1315DL-T1-GE3 Datasheet - Page 2

• Manufacturer Part Number: SI1315DL-T1-GE3
• Description: MOSFET P-CH 8V 900MA SC70-3
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI1315DL-T1-GE3

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 336 mOhm @ 800mA, 4.5V
• Drain To Source Voltage (vdss): 8V
• Current - Continuous Drain (id) @ 25° C: 900mA
• Vgs(th) (max) @ Id: 800mV @ 250µA
• Gate Charge (qg) @ Vgs: 3.4nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 112pF @ 4V
• Power - Max: 400mW
• Mounting Type: Surface Mount
• Package / Case: SC-70, SOT-323
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

Si1315DL
Vishay Siliconix
Notes:
a. Surface mounted on 1" x 1" FR4 board.
b. Maximum under steady state conditions is 430 °C/W.
Notes:
a. Pulse test; pulse width  300 µs, duty cycle  2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
2
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Foot (Drain)
SPECIFICATIONS (T
Parameter
Static
Drain-Source Breakdown Voltage
V
V
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off DelayTime
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off DelayTime
Fall Time
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulse Diode Forward Current
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
GS(th)
DS
Temperature Coefficient
Temperature Coefficient
b
a
a
a
J
a, b
= 25 °C, unless otherwise noted)
a
V
Symbol
V
R
V
GS(th)
I
t
t
t
t
C
I
I
V
GS(th)
D(on)
DS(on)
C
C
Q
V
Q
d(on)
d(off)
d(on)
d(off)
GSS
DSS
I
Q
Q
DS
g
R
SM
I
t
t
t
DS
oss
t
t
t
t
SD
rss
iss
S
rr
a
b
fs
gs
gd
r
r
f
f
g
g
rr
/T
/T
J
J
Steady State
I
V
V
F
t 10 s
I
D
I
DS
DS
= - 0.7 A, dI/dt = 100 A/µs, T
V
D
V
 - 0.7 A, V
DS
DS
 - 0.7 A, V
= - 4 V, V
= - 4 V, V
V
V
V
V
V
= - 8 V, V
V
= - 4 V, V
V
V
V
V
V
DS
GS
GS
GS
DS
GS
DS
DD
DD
DS
DS
Test Conditions
 - 5 V, V
= - 4.5 V, I
= - 2.5 V, I
= - 1.8 V, I
= V
= 0 V, I
= - 5 V, I
= 0 V, V
= - 4 V, R
= - 4 V, R
= - 8 V, V
I
D
T
I
GS
GS
f = 1 MHz
F
GS
GEN
= - 250 µA
C
GEN
= - 0.7 A
GS
GS
= 25 °C
, I
= - 4.5 V, I
= - 2.5 V, I
D
Symbol
D
= 0 V, T
= - 4.5 V, R
= 0 V, f = 1 MHz
= - 8 V, R
GS
GS
R
R
D
= - 250 µA
= - 250 µA
D
D
D
L
L
GS
thJA
thJF
= - 0.8 A
= - 4.5 V
= - 0.8 A
= - 0.5 A
= - 0.3 A
= ± 8 V
= 5.7 
= 5.7 
= 0 V
J
D
D
= 55 °C
= - 0.8 A
= - 0.8 A
g
J
g
= 1 
= 25 °C
= 1 
Typical
315
285
Min.
- 0.4
1.4
- 8
- 2
Maximum
S10-2765-Rev. A, 29-Nov-10
0.280
0.375
0.500
Typ.
- 7.6
- 0.8
375
340
112
2.0
1.7
0.3
0.4
54
40
10
15
14
10
12
14
3
1
7
8
5
7
4
8
6
Document Number: 67193
± 100
0.336
0.450
0.650
Max.
- 0.8
- 0.3
- 1.2
- 10
3.4
- 1
14
20
23
21
16
10
20
20
14
- 3
21
2
8
°C/W
Unit
mV/°C
Unit
nC
nC
nA
µA
pF
ns
ns
ns
V
V
A

S

A
V