SI1315DL-T1-GE3 Vishay, SI1315DL-T1-GE3 Datasheet - Page 5

• Manufacturer Part Number: SI1315DL-T1-GE3
• Description: MOSFET P-CH 8V 900MA SC70-3
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI1315DL-T1-GE3

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 336 mOhm @ 800mA, 4.5V
• Drain To Source Voltage (vdss): 8V
• Current - Continuous Drain (id) @ 25° C: 900mA
• Vgs(th) (max) @ Id: 800mV @ 250µA
• Gate Charge (qg) @ Vgs: 3.4nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 112pF @ 4V
• Power - Max: 400mW
• Mounting Type: Surface Mount
• Package / Case: SC-70, SOT-323
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
* The power dissipation P
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 67193
S10-2765-Rev. A, 29-Nov-10
0.5
0.4
0.3
0.2
0.1
0.0
0
25
Power, Junction-to-Case
D
T
is based on T
C
50
- Case Temperature (°C)
75
J(max)
100
1.0
0.8
0.6
0.4
0.2
0.0
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
0
125
25
150
T
C
Current Derating*
50
- Case Temperature (°C)
75
100
0.35
0.28
0.21
0.14
0.07
0.00
0
125
25
150
Power, Junction-to-Ambient
T
A
- Ambient Temperature (°C)
50
75
Vishay Siliconix
100
Si1315DL
www.vishay.com
125
150
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