ISL9N315AD3 Fairchild Semiconductor, ISL9N315AD3 Datasheet
ISL9N315AD3
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ISL9N315AD3 Summary of contents
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... ISL9N315AD3 / ISL9N315AD3ST N-Channel Logic Level PWM Optimized UltraFET General Description This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance. Optimized for switching applications, this device improves the overall efficiency of DC/DC converters and allows operation to higher switching frequencies ...
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... 15V 10A 4.5V 10V 15V 10A 10V 2 23A 12A 23A, dI /dt = 100A 23A, dI /dt = 100A Min Typ Max 150 250 - - 100 0.012 0.015 - 0.022 0.028 - 900 - - 210 - - 9 15V DD = 23A - 1.0 1 1.0mA - 3 3 120 180 - - - - 1. 1 ISL9N315AD3/ISL9N315AD3ST Rev.A1 Units ...
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... C) Figure 2. Maximum Continuous Drain Current RECTANGULAR PULSE DURATION ( PULSE WIDTH (s) Figure 4. Peak Current Capability V = 10V 4. 100 125 150 175 CASE TEMPERATURE ( C) C Case Temperature NOTES: DUTY FACTOR PEAK FOR TEMPERATURES o ABOVE 25 C DERATE PEAK CURRENT AS FOLLOWS: 175 - 150 - ISL9N315AD3/ISL9N315AD3ST Rev. ...
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... 3.0V GS PULSE DURATION = 80 s DUTY CYCLE = 0.5% MAX 0.5 1.0 1.5 2 DRAIN TO SOURCE VOLTAGE (V) DS PULSE DURATION = 80 s DUTY CYCLE = 0.5% MAX V = 10V - 120 160 JUNCTION TEMPERATURE ( 250 120 160 JUNCTION TEMPERATURE ( C) J ISL9N315AD3/ISL9N315AD3ST Rev.A1 2.5 = 30A 200 200 ...
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... Figure 12. Gate Charge Waveforms for Constant 140 120 t f 100 80 t d(OFF d(ON Figure 14. Switching Time vs Gate Resistance DUT 0.01 Figure 16. Unclamped Energy Waveforms = 15V WAVEFORMS IN DESCENDING ORDER 30A 15A GATE CHARGE (nC) g Gate Currents = 10V 15V d(OFF d(ON GATE TO SOURCE RESISTANCE ( ) GS BV DSS ISL9N315AD3/ISL9N315AD3ST Rev. ...
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... Figure 17. Gate Charge Test Circuit Figure 19. Switching Time Test Circuit ©2003 Fairchild Semiconductor Corporation (Continued DUT g(REF) 0 Figure 18. Gate Charge Waveforms d(ON 90 DUT V GS 50% 10% 0 Figure 20. Switching Time Waveforms Q g(TOT g( g(TH OFF t d(OFF 10% 10% 90% 50% PULSE WIDTH ISL9N315AD3/ISL9N315AD3ST Rev.A1 = 10V 90% ...
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... 0.268 + Area ©2003 Fairchild Semiconductor Corporation , and the 125 application’s ambient 100 never exceeded (EQ 0. Figure 21. Thermal Resistance vs Mounting dissipation. Pulse values listed in the (EQ 33.32 + 23.84/(0.268+Area AREA, TOP COPPER AREA (in ) Pad Area ISL9N315AD3/ISL9N315AD3ST Rev.A1 10 ...
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... PSPICE Electrical Model .SUBCKT ISL9N315AD3 rev October 5.0e- 3.9e-10 CIN 6 8 7.8e-10 DBODY 7 5 DBODYMOD DBREAK 5 11 DBREAKMOD DPLCAP 10 5 DPLCAPMOD EBREAK 31.0 EDS EGS ESG EVTHRES EVTEMP LGATE GATE 1 LDRAIN 2 5 1.0e-9 RLGATE LGATE 1 9 4.53e-9 LSOURCE 3 7 5.38e-10 MMED MMEDMOD ...
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... SABER Electrical Model REV October 2002 template ISL9N315AD3 n2,n1,n3 electrical n2,n1,n3 { var i iscl dp..model dbodymod = (isl = 3.5e-11, nl=1.12 6.4e-3, trs1 = 1e-3, trs2 = 2e-6, xti=2.3, cjo = 6.1e-10 1e- 0.62) dp..model dbreakmod = (rs = 6e-1, trs1 = 1e-3, trs2 = -8.5e-6) dp..model dplcapmod = (cjo = 3.4e-10, isl=10e-30, nl=10, m=0.45) m ...
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... CTHERM6 2 tl 4.0e-2 RTHERM1 th 6 2.7e-3 RTHERM2 6 5 3.7e-3 RTHERM3 5 4 5.3e-2 RTHERM4 4 3 6.3e-1 RTHERM5 3 2 7.4e-1 RTHERM6 2 tl 7.6e-1 SABER Thermal Model SABER thermal model ISL9N315AD3T template thermal_model th tl thermal_c th ctherm.ctherm1 1.3e-3 ctherm.ctherm2 1.5e-3 ctherm.ctherm3 1.6e-3 ctherm.ctherm4 1.7e-3 ctherm.ctherm5 5.8e-3 ctherm ...
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... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FACT™ ActiveArray™ FACT Quiet Series™ ® Bottomless™ FAST CoolFET™ FASTr™ CROSSVOLT™ ...