FDI2532_Q Fairchild Semiconductor
FDI2532_Q
Manufacturer Part Number
FDI2532_Q
Description
MOSFET Power 150V N-Ch UltraFET Trench
Manufacturer
Fairchild Semiconductor
Specifications of FDI2532_Q
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.016 Ohms
Drain-source Breakdown Voltage
150 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
79 A
Power Dissipation
310 W
Maximum Operating Temperature
+ 175 C
Mounting Style
Through Hole
Package / Case
TO-262
Minimum Operating Temperature
- 55 C
Lead Free Status / Rohs Status
No
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