BUK7515-100A NXP Semiconductors, BUK7515-100A Datasheet - Page 7

• Manufacturer Part Number: BUK7515-100A
• Description: MOSFET Power RAIL PWR-MOS
• Manufacturer: NXP Semiconductors

Specifications of BUK7515-100A

• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.15 Ohms
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 75 A
• Power Dissipation: 300 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Package / Case: TO-220AB
• Minimum Operating Temperature: - 55 C
• Lead Free Status / Rohs Status: Details
• Other names: BUK7515-100A,127

NXP Semiconductors
BUK7515-100A
Product data sheet
Fig 10. Forward transconductance as a function of
Fig 12. Gate-source threshold voltage as a function of
V
GS(th)
g
(S)
(V)
fs
80
60
40
20
0
5
4
3
2
1
0
−100
drain current; typical values
junction temperature
V
I
0
D
DS
= 1 mA; V
> I
D
20
x R
DSon
DS
0
= V
40
maximum
GS
minimum
typical
60
100
T
80
All information provided in this document is subject to legal disclaimers.
j
(°C)
003aaf390
003aaf392
I
D
(A)
100
200
Rev. 3 — 21 April 2011
Fig 11. Normalized drain-source on-state resistance
Fig 13. Sub-threshold drain current as a function of
(A)
I
10
10
10
10
10
10
a
D
3.0
2.5
2.0
1.5
1.0
0.5
−1
−2
−3
−4
−5
−6
−100
factor as a function of junction temperature
gate-source voltage
I
T
0
D
j
N-channel TrenchMOS standard level FET
= 25 A; V
= 25 °C; V
1
GS
DS
0
= 10 V
= V
2 %
BUK7515-100A
2
GS
typical
3
100
T
© NXP B.V. 2011. All rights reserved.
mb
98 %
4
003aaf391
003aaf393
V
(°C)
GS
(V)
200
5
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