BUK7515-100A NXP Semiconductors, BUK7515-100A Datasheet - Page 5

• Manufacturer Part Number: BUK7515-100A
• Description: MOSFET Power RAIL PWR-MOS
• Manufacturer: NXP Semiconductors

Specifications of BUK7515-100A

• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.15 Ohms
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 75 A
• Power Dissipation: 300 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Package / Case: TO-220AB
• Minimum Operating Temperature: - 55 C
• Lead Free Status / Rohs Status: Details
• Other names: BUK7515-100A,127

NXP Semiconductors
6. Characteristics
Table 6.
BUK7515-100A
Product data sheet
Symbol
Static characteristics
V
V
I
I
R
Dynamic characteristics
C
C
C
t
t
t
t
L
L
Source-drain diode
V
t
Q
DSS
GSS
d(on)
r
d(off)
f
rr
D
S
(BR)DSS
GS(th)
SD
DSon
iss
oss
rss
r
Characteristics
Parameter
drain-source
breakdown voltage
gate-source threshold
voltage
drain leakage current
gate leakage current
drain-source on-state
resistance
input capacitance
output capacitance
reverse transfer
capacitance
turn-on delay time
rise time
turn-off delay time
fall time
internal drain
inductance
internal source
inductance
source-drain voltage
reverse recovery time
recovered charge
Conditions
I
I
I
I
I
V
V
V
V
V
V
V
T
V
R
from contact screw on tab to centre of
die; T
from drain lead 6 mm from package to
centre of die; T
from source lead 6 mm from package to
source bond pad; T
I
I
I
V
All information provided in this document is subject to legal disclaimers.
D
D
D
D
D
S
S
S
j
DS
DS
GS
GS
GS
GS
GS
DS
GS
G(ext)
= 25 °C
= 25 A; V
= 75 A; V
= 75 A; dI
= 0.25 mA; V
= 0.25 mA; V
= 1 mA; V
= 1 mA; V
= 1 mA; V
= 100 V; V
= 100 V; V
= 30 V; R
= 20 V; V
= -20 V; V
= 10 V; I
= 10 V; I
= 0 V; V
= -10 V; V
j
= 25 °C
= 10 Ω; T
Rev. 3 — 21 April 2011
GS
GS
S
DS
DS
DS
DS
D
D
/dt = -100 A/µs;
DS
L
DS
DS
= 25 A; T
= 25 A; T
= 0 V; T
= 0 V; T
GS
GS
j
= V
= V
= V
= 1.2 Ω; V
GS
GS
= 25 V; f = 1 MHz;
= 25 °C
j
= 0 V; T
= 25 °C
= 0 V; T
= 30 V; T
= 0 V; T
= 0 V; T
= 0 V; T
= 0 V; T
GS
GS
GS
j
= 25 °C
; T
; T
; T
j
j
= 25 °C
= 25 °C
j
j
j
j
j
j
= 25 °C
= 175 °C
= -55 °C
= 175 °C
= 25 °C
j
GS
= 25 °C
j
j
= 25 °C
j
j
j
= 175 °C
= 25 °C
= 25 °C
= -55 °C
= 25 °C
= 10 V;
N-channel TrenchMOS standard level FET
BUK7515-100A
Min
100
89
2
1
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ
-
-
3
-
-
-
0.05
2
2
-
12
4500
550
305
35
85
150
70
3.5
4.5
7.5
0.85
1.1
80
0.35
© NXP B.V. 2011. All rights reserved.
660
125
Max
-
-
4
-
4.4
500
10
100
100
40.5
15
6000
400
55
225
100
-
-
-
1.2
-
-
-
Unit
V
V
V
V
V
µA
µA
nA
nA
mΩ
mΩ
pF
pF
pF
ns
ns
ns
ns
nH
nH
nH
V
V
ns
µC
5 of 13