BUK7515-100A NXP Semiconductors, BUK7515-100A Datasheet

MOSFET Power RAIL PWR-MOS

BUK7515-100A

Manufacturer Part Number
BUK7515-100A
Description
MOSFET Power RAIL PWR-MOS
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BUK7515-100A

Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.15 Ohms
Drain-source Breakdown Voltage
100 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
75 A
Power Dissipation
300 W
Maximum Operating Temperature
+ 175 C
Mounting Style
Through Hole
Package / Case
TO-220AB
Minimum Operating Temperature
- 55 C
Lead Free Status / Rohs Status
 Details
Other names
BUK7515-100A,127

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Manufacturer:
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Part Number:
BUK7515-100A
Manufacturer:
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Quantity:
12 500
1. Product profile
1.1 General description
1.2 Features and benefits
1.3 Applications
1.4 Quick reference data
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. This product has been designed and qualified to
the appropriate AEC standard for use in automotive critical applications.
Table 1.
Symbol
V
I
P
Static characteristics
R
Avalance ruggedness
E
D
DS
tot
DS(AL)S
DSon
BUK7515-100A
N-channel TrenchMOS standard level FET
Rev. 3 — 21 April 2011
AEC Q101 compliant
Automotive and general purpose
power switching
Quick reference data
Parameter
drain-source voltage
drain current
total power dissipation
drain-source on-state
resistance
non-repetitive
drain-source avalanche
energy
Conditions
T
T
V
T
I
R
T
D
j
mb
j
j(init)
GS
GS
≥ 25 °C; T
= 25 °C
= 35 A; V
= 25 °C
= 10 V; I
= 50 Ω; V
= 25 °C; unclamped
sup
j
D
≤ 175 °C
GS
= 25 A;
≤ 25 V;
Low conduction losses due to low
on-state resistance
= 10 V;
Min
-
-
-
-
-
Product data sheet
Typ
-
-
-
12
-
Max Unit
100
75
300
15
120
V
A
W
mΩ
mJ

Related parts for BUK7515-100A

BUK7515-100A Summary of contents

Page 1

... BUK7515-100A N-channel TrenchMOS standard level FET Rev. 3 — 21 April 2011 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. ...

Page 2

... N-channel TrenchMOS standard level FET Simplified outline SOT78A (TO-220AB) Description plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB All information provided in this document is subject to legal disclaimers. Rev. 3 — 21 April 2011 BUK7515-100A Graphic symbol mbb076 Version SOT78A © NXP B.V. 2011. All rights reserved ...

Page 3

... I D (%) 150 200 0 T (° Fig 2. Normalized continuous drain current as a function of mounting base temperature All information provided in this document is subject to legal disclaimers. Rev. 3 — 21 April 2011 BUK7515-100A N-channel TrenchMOS standard level FET Min - - - -55 - Ω 003aaf383 50 100 150 T mb ≥ ...

Page 4

... P 0.1 0.05 0.02 single pulse −2 10 −5 −4 −3 − All information provided in this document is subject to legal disclaimers. Rev. 3 — 21 April 2011 BUK7515-100A N-channel TrenchMOS standard level FET 100 DSS 100 Normalised drain-source non-repetitive avalanche energy as a function of mounting-base temperature Min ...

Page 5

... °C j from source lead 6 mm from package to source bond pad ° ° ° /dt = -100 A/µ - ° All information provided in this document is subject to legal disclaimers. Rev. 3 — 21 April 2011 BUK7515-100A Min Typ Max Unit 100 - - 4 500 µA - 0.05 10 µ 100 ...

Page 6

... R DS(on) (mΩ) 7.5 7 6.5 6 5.5 4 (V) DS Fig 7. 003aaf388 (V) GS Fig 9. All information provided in this document is subject to legal disclaimers. Rev. 3 — 21 April 2011 BUK7515-100A N-channel TrenchMOS standard level FET ( °C j Drain-source on-state resistance as a function of drain current; typical values 100 175 °C ...

Page 7

... D Fig 11. Normalized drain-source on-state resistance 003aaf392 100 200 T (°C) j Fig 13. Sub-threshold drain current as a function of All information provided in this document is subject to legal disclaimers. Rev. 3 — 21 April 2011 BUK7515-100A N-channel TrenchMOS standard level FET 3.0 a 2.5 2.0 1.5 1.0 0.5 −100 0 100 ...

Page 8

... (V) DS Fig 15. Gate-source voltage as a function of gate 100 175 ° 0.4 0.8 All information provided in this document is subject to legal disclaimers. Rev. 3 — 21 April 2011 BUK7515-100A N-channel TrenchMOS standard level FET ° charge; typical values 003aaf396 = 25 ° 1.2 V (V) SDS ...

Page 9

... 0.7 15.8 6.4 10.3 2.54 0.4 15.2 5.9 9.7 REFERENCES JEDEC JEITA 3-lead TO-220AB SC-46 All information provided in this document is subject to legal disclaimers. Rev. 3 — 21 April 2011 BUK7515-100A N-channel TrenchMOS standard level FET mounting base ( max. 15.0 3.30 3.8 3.0 3.0 13 ...

Page 10

... NXP Semiconductors 8. Revision history Table 7. Revision history Document ID Release date BUK7515-100A v.3 20110421 • Modifications: The format of this data sheet has been redesigned to comply with the new identity guidelines of NXP Semiconductors. • Legal texts have been adapted to the new company name where appropriate. ...

Page 11

... Recommended operating conditions section (if present) or the All information provided in this document is subject to legal disclaimers. Rev. 3 — 21 April 2011 BUK7515-100A N-channel TrenchMOS standard level FET © NXP B.V. 2011. All rights reserved ...

Page 12

... TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V. HD Radio and HD Radio logo — are trademarks of iBiquity Digital Corporation. http://www.nxp.com salesaddresses@nxp.com All information provided in this document is subject to legal disclaimers. Rev. 3 — 21 April 2011 BUK7515-100A N-channel TrenchMOS standard level FET Trademarks © NXP B.V. 2011. All rights reserved ...

Page 13

... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2011. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com All rights reserved. Date of release: 21 April 2011 Document identifier: BUK7515-100A ...

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