BUK7515-100A NXP Semiconductors, BUK7515-100A Datasheet - Page 10

MOSFET Power RAIL PWR-MOS

BUK7515-100A

Manufacturer Part Number
BUK7515-100A
Description
MOSFET Power RAIL PWR-MOS
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BUK7515-100A

Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.15 Ohms
Drain-source Breakdown Voltage
100 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
75 A
Power Dissipation
300 W
Maximum Operating Temperature
+ 175 C
Mounting Style
Through Hole
Package / Case
TO-220AB
Minimum Operating Temperature
- 55 C
Lead Free Status / Rohs Status
 Details
Other names
BUK7515-100A,127

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BUK7515-100A
Manufacturer:
PHI
Quantity:
11 550
Part Number:
BUK7515-100A
Manufacturer:
NXP
Quantity:
51 000
Part Number:
BUK7515-100A
Manufacturer:
NXP
Quantity:
12 500
NXP Semiconductors
8. Revision history
Table 7.
BUK7515-100A
Product data sheet
Document ID
BUK7515-100A v.3
Modifications:
BUK7515-100A_2
Revision history
Release date
20110421
20030601
The format of this data sheet has been redesigned to comply with the new identity guidelines
of NXP Semiconductors.
Legal texts have been adapted to the new company name where appropriate.
All information provided in this document is subject to legal disclaimers.
Data sheet status
Product data sheet
Product specification
Rev. 3 — 21 April 2011
N-channel TrenchMOS standard level FET
Change notice
-
-
BUK7515-100A
Supersedes
BUK7515-100A_2
BUK7515-100A_1
© NXP B.V. 2011. All rights reserved.
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