BUK7515-100A NXP Semiconductors, BUK7515-100A Datasheet - Page 4

• Manufacturer Part Number: BUK7515-100A
• Description: MOSFET Power RAIL PWR-MOS
• Manufacturer: NXP Semiconductors

Specifications of BUK7515-100A

• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.15 Ohms
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 75 A
• Power Dissipation: 300 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Package / Case: TO-220AB
• Minimum Operating Temperature: - 55 C
• Lead Free Status / Rohs Status: Details
• Other names: BUK7515-100A,127

NXP Semiconductors
5. Thermal characteristics
Table 5.
BUK7515-100A
Product data sheet
Symbol
R
R
Fig 3.
Fig 5.
th(j-mb)
th(j-a)
I
(A)
10
DM
10
10
1
3
2
currents as a function of drain-source voltage
T
Safe operating area; continuous and peak drain
Transient thermal impedance from junction to mounting base as a function of pulse duration
1
mb
R
Thermal characteristics
DSon
= 25 °C
Parameter
thermal resistance from
junction to mounting base
thermal resistance from
junction to ambient
= V
DS
/ I
10
D
D.C.
Z
(K/W)
th(j-mb)
10
10
10
tp = 10 μs
100 μs
1 ms
10 ms
100 ms
2
−1
−2
1
10
V
−5
All information provided in this document is subject to legal disclaimers.
DS
0.2
0.1
0.05
0.02
δ
003aaf384
= 0.5
(V)
10
single pulse
−4
10
Conditions
in free air
Rev. 3 — 21 April 2011
3
10
−3
10
−2
Fig 4.
P
W
10
(%)
DSS
−1
100
t
80
60
40
20
p
0
20
avalanche energy as a function of
mounting-base temperature
I
Normalised drain-source non-repetitive
T
D
N-channel TrenchMOS standard level FET
1
= 75 A
003aaf385
δ =
t
p
(s)
T
t
t
p
10
60
BUK7515-100A
Min
-
-
100
Typ
-
60
140
© NXP B.V. 2011. All rights reserved.
T
mb
003aaf397
Max
0.5
-
(°C)
180
Unit
K/W
K/W
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