HUF76131SK8 Fairchild Semiconductor, HUF76131SK8 Datasheet - Page 3
HUF76131SK8
Manufacturer Part Number
HUF76131SK8
Description
MOSFET Power 10a 30V 0.013 Ohm 1Ch HS Logic Gate
Manufacturer
Fairchild Semiconductor
Specifications of HUF76131SK8
Configuration
Single Quad Drain Triple Source
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.013 Ohms
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
10 A
Power Dissipation
2.5 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
SOP-8
Minimum Operating Temperature
- 55 C
Lead Free Status / Rohs Status
No
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
HUF76131SK8T
Manufacturer:
INFINEON/英飞凌
Quantity:
20 000
Typical Performance Curves
©2003 Fairchild Semiconductor Corporation
FIGURE 1. NORMALIZED POWER DISSIPATION vs AMBIENT
500
100
1.2
1.0
0.8
0.6
0.4
0.2
FIGURE 4. FORWARD BIAS SAFE OPERATING AREA
10
1
0
1
0
0.001
0.01
OPERATION IN THIS
AREA MAY BE
LIMITED BY r
0.1
10
1
10
TEMPERATURE
-5
25
DUTY CYCLE - DESCENDING ORDER
0.5
0.2
0.1
0.05
0.02
0.01
V
DS
T
A
, DRAIN TO SOURCE VOLTAGE (V)
, AMBIENT TEMPERATURE (
DS(ON)
50
10
-4
V
DSS(MAX)
FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
10
75
SINGLE PULSE
= 30V
100
10
-3
T
T
A
J
o
C)
= MAX RATED
= 25
10ms
100 s
1ms
125
o
C
t, RECTANGULAR PULSE DURATION (s)
10
-2
150
100
10
-1
1000
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
100
12
10
10
8
6
4
2
0
1
10
25
-5
FOR TEMPERATURES
ABOVE 25
CURRENT AS FOLLOWS:
I = I
FIGURE 5. PEAK CURRENT CAPABILITY
V
10
25
GS
AMBIENT TEMPERATURE
0
10
= 5V
-4
50
o
C DERATE PEAK
T
150 - T
A
, AMBIENT TEMPERATURE (
NOTES:
DUTY FACTOR: D = t
PEAK T
125
10
TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION
t, PULSE WIDTH (s)
-3
A
10
75
J
1
= P
10
DM
-2
T
x Z
P
A
DM
100
= 25
JA
1
/t
10
10
o
2
x R
C
2
-1
t
1
JA
t
HUF76131SK8 Rev. B1
o
2
C)
+ T
125
10
A
0
10
3
10
150
1