FDP2670_Q Fairchild Semiconductor
FDP2670_Q
Manufacturer Part Number
FDP2670_Q
Description
MOSFET Power 200V NCh PowerTrench
Manufacturer
Fairchild Semiconductor
Specifications of FDP2670_Q
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.13 Ohms
Forward Transconductance Gfs (max / Min)
24 S
Drain-source Breakdown Voltage
200 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
19 A
Power Dissipation
93 W
Maximum Operating Temperature
+ 175 C
Mounting Style
Through Hole
Package / Case
TO-220AB
Minimum Operating Temperature
- 65 C
Lead Free Status / Rohs Status
No RoHS Version Available
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