IRFS840B Fairchild Semiconductor, IRFS840B Datasheet - Page 5

• Manufacturer Part Number: IRFS840B
• Description: MOSFET Power 500V N-Channel B-FET
• Manufacturer: Fairchild Semiconductor

Specifications of IRFS840B

• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.65 Ohms
• Forward Transconductance Gfs (max / Min): 7.3 S
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 8 A
• Power Dissipation: 44 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Package / Case: TO-220F
• Minimum Operating Temperature: - 55 C
• Lead Free Status / Rohs Status: Details

©2001 Fairchild Semiconductor Corporation
Typical Characteristics
1 0
1 0
1 0
1 0
1 0
1 0
Figure 11-2. Transient Thermal Response Curve for IRFS840B
- 1
- 2
Figure 11-1. Transient Thermal Response Curve for IRF840B
0
1 0
- 1
- 2
0
1 0
- 5
- 5
D = 0 .5
0 . 0 2
0 . 0 1
0 . 0 5
0 . 2
D = 0 .5
0 . 0 2
0 . 0 1
0 . 1
0 . 0 5
0 . 2
0 . 1
1 0
(Continued)
1 0
s in g le p u ls e
- 4
s in g le p u ls e
- 4
t
t
1
1
, S q u a re W a v e P u ls e D u ra tio n [s e c ]
, S q u a re W a v e P u ls e D u ra tio n [s e c ]
1 0
1 0
- 3
- 3
1 0
1 0
- 2
- 2
 N o te s :
1 0
1 0
 N o te s :
1 . Z
2 . D u ty F a c to r, D = t
3 . T
- 1
1 . Z
2 . D u ty F a c to r, D = t
3 . T
- 1
P
P
DM
 J C
J M
DM
 J C
J M
- T
(t) = 0 .9 3  /W M a x .
- T
(t) = 2 .8 6  /W M a x .
C
C
= P
= P
t
1
t
D M
1
t
1 0
D M
2
t
1 0
2
* Z
* Z
0
0
1
 J C
/t
1
 J C
2
/t
2
(t)
(t)
1 0
1 0
1
1
Rev. A, November 2001