FDS6670S Fairchild Semiconductor, FDS6670S Datasheet
FDS6670S
Manufacturer Part Number
FDS6670S
Description
MOSFET Power SO-8
Manufacturer
Fairchild Semiconductor
Specifications of FDS6670S
Configuration
Single Quad Drain Triple Source
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.009 Ohms
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
13.5 A
Power Dissipation
2.5 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
SOIC-8 Narrow
Minimum Operating Temperature
- 55 C
Lead Free Status / Rohs Status
In Transition
Other names
FDS6670S_NL
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FDS6670S
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
Company:
Part Number:
FDS6670S-NL
Manufacturer:
FAIRCHILD
Quantity:
50 000
FDS6670S
30V N-Channel PowerTrench SyncFET
General Description
The FDS6670S is designed to replace a single SO-8
MOSFET and Schottky diode in synchronous DC:DC
power supplies.
maximize power conversion efficiency, providing a low
R
an
monolithic SyncFET technology.
Applications
2001 Fairchild Semiconductor Corporation
DS(ON)
Absolute Maximum Ratings
Symbol
V
V
I
P
T
Thermal Characteristics
R
R
Package Marking and Ordering Information
D
DC/DC converter
Motor drives
J
DSS
GSS
D
, T
JA
JC
Device Marking
integrated
STG
FDS6670S
and low gate charge. The FDS6670S includes
D
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Power Dissipation for Single Operation
Operating and Storage Junction Temperature Range
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
Schottky
This 30V MOSFET is designed to
D
SO-8
D
D
diode
– Continuous
– Pulsed
S
FDS6670S
Device
Parameter
S
using
S
G
Fairchild’s
T
A
=25
o
C unless otherwise noted
Reel Size
13’’
(Note 1a)
(Note 1a)
(Note 1b)
(Note 1a)
(Note 1c)
(Note 1)
™
Features
13.5 A, 30 V.
Includes SyncFET Schottky body diode
Low gate charge (24nC typical)
High performance trench technology for extremely low
R
High power and current handling capability
DS(ON)
and fast switching
5
6
7
8
Tape width
–55 to +150
12mm
R
R
Ratings
DS(ON)
DS(ON)
13.5
2.5
1.2
30
50
50
25
20
1
= 9 m
= 12.5 m
@ V
4
3
2
1
August 2001
@ V
GS
= 10 V
2500 units
GS
Quantity
FDS6670S Rev E (W)
= 4.5 V
Units
C/W
C/W
W
V
V
A
C
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