FDB6670S Fairchild Semiconductor
FDB6670S
Manufacturer Part Number
FDB6670S
Description
MOSFET Power
Manufacturer
Fairchild Semiconductor
Specifications of FDB6670S
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.0085 Ohms @ 10 V
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
62 A
Power Dissipation
62.5 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
TO-263AB
Minimum Operating Temperature
- 55 C
Lead Free Status / Rohs Status
In Transition
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