PSMN5R0-100PS,127 NXP Semiconductors, PSMN5R0-100PS,127 Datasheet - Page 9

• Manufacturer Part Number: PSMN5R0-100PS,127
• Description: MOSFET Power N-Ch 100V 5 mOhms
• Manufacturer: NXP Semiconductors
• Series: -r

Specifications of PSMN5R0-100PS,127

• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 5 mOhms
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 110 A
• Power Dissipation: 338 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Package / Case: TO-220AB
• Gate Charge Qg: 170 nC
• Minimum Operating Temperature: - 55 C
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 5 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 120A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Gate Charge (qg) @ Vgs: 170nC @ 10V
• Input Capacitance (ciss) @ Vds: 9900pF @ 50V
• Power - Max: 338W
• Mounting Type: Through Hole
• Lead Free Status / Rohs Status: Details
• Other names: 934065172127

NXP Semiconductors
PSMN5R0-100PS
Product data sheet
Fig 17. Source (diode forward) current as a function of source-drain (diode forward) voltage; typical values
(A)
I
100
S
80
60
40
20
0
0
All information provided in this document is subject to legal disclaimers.
T
0.3
j
Rev. 2 — 15 April 2011
= 175 ° C
N-channel 100 V 5 mΩ standard level MOSFET in TO-220
0.6
T
j
= 25 ° C
0.9
003aaf731
V
SD
(V)
1.2
PSMN5R0-100PS
© NXP B.V. 2011. All rights reserved.
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