PSMN5R0-100ES,127 NXP Semiconductors, PSMN5R0-100ES,127 Datasheet
PSMN5R0-100ES,127
Specifications of PSMN5R0-100ES,127
Related parts for PSMN5R0-100ES,127
PSMN5R0-100ES,127 Summary of contents
Page 1
... PSMN5R0-100ES N-channel 100 V 5 mΩ standard level MOSFET in I2PAK Rev. 2 — 15 April 2011 1. Product profile 1.1 General description Standard level N-channel MOSFET in a I2PAK package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment ...
Page 2
... Ω; Unclamped avalanche energy R GS Simplified outline SOT226 (I2PAK) Description plastic single-ended package (I2PAK); TO-262 All information provided in this document is subject to legal disclaimers. Rev. 2 — 15 April 2011 PSMN5R0-100ES Min = Figure 14 °C; - j(init) ≤ 100 V; sup Graphic symbol G mbb076 © NXP B.V. 2011. All rights reserved. ...
Page 3
... Unclamped V sup GS 003aaf735 120 P der (%) 150 200 T (°C) mb Fig 2. Normalized total power dissipation as a function of mounting base temperature All information provided in this document is subject to legal disclaimers. Rev. 2 — 15 April 2011 PSMN5R0-100ES Min - = 20 kΩ -20 Figure 1 - [1] Figure ° -55 - ° 120 A ...
Page 4
... Transient thermal impedance from junction to mounting base as a function of pulse duration PSMN5R0-100ES Product data sheet N-channel 100 V 5 mΩ standard level MOSFET in I2PAK Conditions see Figure 4 Vertical in free air - All information provided in this document is subject to legal disclaimers. Rev. 2 — 15 April 2011 PSMN5R0-100ES 003aaf734 =10 μ 100 μ 100 (V) DS Min Typ ...
Page 5
... Figure 14; see Figure see Figure 14; DS see Figure MHz °C; see Figure 0.67 Ω 4.7 Ω °C G(ext All information provided in this document is subject to legal disclaimers. Rev. 2 — 15 April 2011 PSMN5R0-100ES Min Typ Max Unit 100 - - 4 0.08 10 µ 500 µ 100 ...
Page 6
... I D (A) 200 160 120 (V) GS Fig 8. Output characteristics: drain current as a function of drain-source voltage; typical values All information provided in this document is subject to legal disclaimers. Rev. 2 — 15 April 2011 PSMN5R0-100ES Min Typ Max - 0.8 1 235 - 003aaf724 = 175 ° ° ...
Page 7
... V (V) GS Fig 10. Gate-source threshold voltage as a function of 03aa35 typ max (V) GS Fig 12. Normalized drain-source on-state resistance All information provided in this document is subject to legal disclaimers. Rev. 2 — 15 April 2011 PSMN5R0-100ES 5 GS(th) (V) 4 max 3 typ 2 min 1 0 − junction temperature 2 ...
Page 8
... I (A) D Fig 14. Gate charge waveform definitions 003aaf729 150 200 Q (nC) G Fig 16. Input, output and reverse transfer capacitances All information provided in this document is subject to legal disclaimers. Rev. 2 — 15 April 2011 PSMN5R0-100ES GS(pl) V GS(th GS1 GS2 G(tot) ...
Page 9
... Product data sheet N-channel 100 V 5 mΩ standard level MOSFET in I2PAK 100 175 ° 0.3 0.6 All information provided in this document is subject to legal disclaimers. Rev. 2 — 15 April 2011 PSMN5R0-100ES 003aaf731 = 25 ° C 0.9 1.2 V (V) SD © NXP B.V. 2011. All rights reserved ...
Page 10
... max 0.7 1.6 10.3 11 2.54 0.4 1.2 9.7 REFERENCES JEDEC JEITA TO-262 All information provided in this document is subject to legal disclaimers. Rev. 2 — 15 April 2011 PSMN5R0-100ES mounting base 15.0 3.30 2.6 13.5 2.79 2.2 EUROPEAN PROJECTION SOT226 ISSUE DATE 06-02-14 09-08-25 © ...
Page 11
... NXP Semiconductors 8. Revision history Table 7. Revision history Document ID Release date PSMN5R0-100ES v.2 20110415 • Modifications: Status changed from objective to product. PSMN5R0-100ES v.1 20101227 PSMN5R0-100ES Product data sheet N-channel 100 V 5 mΩ standard level MOSFET in I2PAK Data sheet status Change notice Product data sheet ...
Page 12
... In case an individual agreement is concluded only the terms and conditions of the respective All information provided in this document is subject to legal disclaimers. Rev. 2 — 15 April 2011 PSMN5R0-100ES © NXP B.V. 2011. All rights reserved ...
Page 13
... TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V. HD Radio and HD Radio logo — are trademarks of iBiquity Digital Corporation. http://www.nxp.com salesaddresses@nxp.com All information provided in this document is subject to legal disclaimers. Rev. 2 — 15 April 2011 PSMN5R0-100ES Trademarks © NXP B.V. 2011. All rights reserved ...
Page 14
... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2011. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com All rights reserved. Date of release: 15 April 2011 Document identifier: PSMN5R0-100ES ...