PSMN5R0-80PS NXP Semiconductors, PSMN5R0-80PS Datasheet

PSMN5R0-80PS

Manufacturer Part Number
PSMN5R0-80PS
Description
Manufacturer
NXP Semiconductors
Datasheet

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PSMN5R0-80PS
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1. Product profile
1.1 General description
1.2 Features and benefits
1.3 Applications
1.4 Quick reference data
Standard level N-channel MOSFET in TO220 package qualified to 175 °C. This product is
designed and qualified for use in a wide range of industrial, communications and domestic
equipment.
Table 1.
[1]
Symbol Parameter
V
I
P
Dynamic characteristics
Q
Static characteristics
R
D
DS
tot
GD
DSon
High efficiency due to low switching
and conduction losses
DC-to-DC converters
Load switching
Measured 3 mm from package.
PSMN5R0-80PS
N-channel 80 V 4.7 mΩ standard level MOSFET
Rev. 02 — 23 June 2009
drain-source voltage T
drain current
total power
dissipation
gate-drain charge
drain-source
on-state resistance
Quick reference
Conditions
T
see
T
V
V
see
V
T
j
mb
mb
j
GS
DS
GS
≥ 25 °C; T
= 25 °C;
Figure 1
Figure 15
= 25 °C; V
= 25 °C; see
= 40 V; see
= 10 V; I
= 10 V; I
j
D
D
≤ 175 °C
GS
= 25 A;
= 15 A;
Figure
Figure 2
= 10 V;
Suitable for standard level gate drive
sources
Motor control
Server power supplies
14;
[1]
Min
-
-
-
-
-
Product data sheet
Typ
-
-
-
21
3.7
Max
80
100
270
-
4.7
Unit
V
A
W
nC
mΩ

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PSMN5R0-80PS Summary of contents

Page 1

... PSMN5R0-80PS N-channel 80 V 4.7 mΩ standard level MOSFET Rev. 02 — 23 June 2009 1. Product profile 1.1 General description Standard level N-channel MOSFET in TO220 package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits ...

Page 2

... Ordering information Type number Package Name Description PSMN5R0-80PS TO-220AB; plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead SC-46 TO-220AB PSMN5R0-80PS_2 Product data sheet PSMN5R0-80PS N-channel 80 V 4.7 mΩ standard level MOSFET Simplified outline SOT78 (TO-220AB; SC-46) Rev. 02 — 23 June 2009 Graphic symbol D G ...

Page 3

... j(init Ω; unclamped R GS 003aad078 120 P der (%) 150 200 0 T (°C) mb Fig 2. Normalized total power dissipation as a function of mounting base temperature Rev. 02 — 23 June 2009 PSMN5R0-80PS Min Max - - 100 - 100 Figure 3 - 598 - 270 -55 175 -55 175 - 100 - 598 ≤ ...

Page 4

... Transient thermal impedance from junction to mounting base as a function of pulse duration; typical values PSMN5R0-80PS_2 Product data sheet N-channel 80 V 4.7 mΩ standard level MOSFET = ( Conditions see Figure Rev. 02 — 23 June 2009 PSMN5R0-80PS 003aad299 10 μs 100 μ 100 (V) DS Min Typ Max - 0.3 0.56 003aad080 t p δ ...

Page 5

... Figure 14; see Figure MHz °C; see Figure 0.5 Ω 4.7 Ω R G(ext) Rev. 02 — 23 June 2009 PSMN5R0-80PS Min Typ Max Unit 4 µA ...

Page 6

... C (pF) 9000 8000 7000 6000 5000 4000 25 °C 3000 (V) GS Fig 8. Input and reverse transfer capacitances as a function of gate-source voltage; typical values Rev. 02 — 23 June 2009 PSMN5R0-80PS Min Typ Max Unit - 0.8 1 116 - nC 003aad082 V ( 5.5 6 ...

Page 7

... V GS(th) (V) max − (V) GS Fig 12. Gate-source threshold voltage as a function of junction temperature Rev. 02 — 23 June 2009 PSMN5R0-80PS 003aad089 (V) GS 003aad280 max typ min 0 60 120 180 T (°C) j © NXP B.V. 2009. All rights reserved. ...

Page 8

... C (pF 100 120 10 Q (nC) G Fig 16. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values Rev. 02 — 23 June 2009 PSMN5R0-80PS GS(pl) V GS(th GS1 GS2 G(tot) 003aaa508 003aad086 ...

Page 9

... Fig 17. Source (diode forward) current as a function of source-drain (diode forward) voltage; typical values PSMN5R0-80PS_2 Product data sheet N-channel 80 V 4.7 mΩ standard level MOSFET 100 175 ° ° 0.2 0.4 0.6 0.8 Rev. 02 — 23 June 2009 PSMN5R0-80PS 003aad084 1 1.2 V (V) SD © NXP B.V. 2009. All rights reserved ...

Page 10

... 0.7 16.0 6.6 10.3 15.0 2.54 0.4 15.2 5.9 9.7 12.8 REFERENCES JEDEC JEITA SC-46 3-lead TO-220AB Rev. 02 — 23 June 2009 PSMN5R0-80PS mounting base Q c ( max. 3.30 3.8 3.0 2.6 3.0 2.79 3.5 2.7 2.2 EUROPEAN ISSUE DATE PROJECTION 08-04-23 08-06-13 © NXP B.V. 2009. All rights reserved. SOT78 ...

Page 11

... Various changes to content. PSMN5R0-80PS_1 20090507 PSMN5R0-80PS_2 Product data sheet N-channel 80 V 4.7 mΩ standard level MOSFET Data sheet status Change notice Product data sheet - Objective data sheet - Rev. 02 — 23 June 2009 PSMN5R0-80PS Supersedes PSMN5R0-80PS_1 - © NXP B.V. 2009. All rights reserved ...

Page 12

... Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. TrenchMOS — trademark of NXP B.V. http://www.nxp.com salesaddresses@nxp.com Rev. 02 — 23 June 2009 PSMN5R0-80PS © NXP B.V. 2009. All rights reserved ...

Page 13

... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2009. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Document identifier: PSMN5R0-80PS_2 All rights reserved. Date of release: 23 June 2009 ...

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