PSMN5R0-100PS,127 NXP Semiconductors, PSMN5R0-100PS,127 Datasheet - Page 3

• Manufacturer Part Number: PSMN5R0-100PS,127
• Description: MOSFET Power N-Ch 100V 5 mOhms
• Manufacturer: NXP Semiconductors
• Series: -r

Specifications of PSMN5R0-100PS,127

• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 5 mOhms
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 110 A
• Power Dissipation: 338 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Package / Case: TO-220AB
• Gate Charge Qg: 170 nC
• Minimum Operating Temperature: - 55 C
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 5 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 120A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Gate Charge (qg) @ Vgs: 170nC @ 10V
• Input Capacitance (ciss) @ Vds: 9900pF @ 50V
• Power - Max: 338W
• Mounting Type: Through Hole
• Lead Free Status / Rohs Status: Details
• Other names: 934065172127

NXP Semiconductors
4. Limiting values
Table 4.
In accordance with the Absolute Maximum Rating System (IEC 60134).
[1]
PSMN5R0-100PS
Product data sheet
Symbol
V
V
V
I
I
P
T
T
T
Source-drain diode
I
I
Avalanche ruggedness
E
D
DM
S
SM
Fig 1.
stg
j
sld(M)
DS
DGR
GS
tot
DS(AL)S
Continuous current limited by package.
(A)
I
D
200
160
120
80
40
0
mounting base temperature
Continuous drain current as a function of
0
Limiting values
Parameter
drain-source voltage
drain-gate voltage
gate-source voltage
drain current
peak drain current
total power dissipation
storage temperature
junction temperature
peak soldering temperature
source current
peak source current
non-repetitive drain-source
avalanche energy
(1)
50
100
150
All information provided in this document is subject to legal disclaimers.
T
003aaf735
mb
(°C)
200
Conditions
T
T
V
V
pulsed; t
see
T
T
pulsed; t
V
V
j
j
mb
mb
Rev. 2 — 15 April 2011
GS
GS
GS
sup
≥ 25 °C; T
≥ 25 °C; T
Figure 3
= 25 °C; see
= 25 °C
= 10 V; T
= 10 V; T
= 10 V; T
≤ 100 V; R
N-channel 100 V 5 mΩ standard level MOSFET in TO-220
p
p
≤ 10 µs; T
≤ 10 µs; T
j
j
Fig 2.
≤ 175 °C
≤ 175 °C; R
j
mb
j(init)
= 100 °C; see
GS
= 25 °C; see
P
Figure 2
(%)
= 25 °C; I
der
= 50 Ω; Unclamped
120
80
40
mb
mb
0
function of mounting base temperature
Normalized total power dissipation as a
0
= 25 °C;
= 25 °C
GS
D
= 20 kΩ
Figure 1
= 120 A;
Figure 1
50
PSMN5R0-100PS
100
[1]
[1]
Min
-
-
-20
-
-
-
-
-55
-55
-
-
-
-
150
© NXP B.V. 2011. All rights reserved.
T
mb
175
175
260
Max
100
100
20
110
120
622
338
120
622
537
03aa16
(°C)
200
Unit
V
V
V
A
A
A
W
°C
°C
°C
A
A
mJ
3 of 14