PSMN5R0-80PS,127 NXP Semiconductors, PSMN5R0-80PS,127 Datasheet
PSMN5R0-80PS,127
Specifications of PSMN5R0-80PS,127
934063912127
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PSMN5R0-80PS,127 Summary of contents
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... PSMN5R0-80PS N-channel 80 V 4.7 mΩ standard level MOSFET Rev. 02 — 23 June 2009 1. Product profile 1.1 General description Standard level N-channel MOSFET in TO220 package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. ...
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... Ordering information Type number Package Name Description PSMN5R0-80PS TO-220AB; plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead SC-46 TO-220AB PSMN5R0-80PS_2 Product data sheet PSMN5R0-80PS N-channel 80 V 4.7 mΩ standard level MOSFET Simplified outline SOT78 (TO-220AB; SC-46) Rev. 02 — 23 June 2009 Graphic symbol D G ...
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... I = 100 j(init Ω; unclamped R GS 003aad078 120 P der (%) 150 200 0 T (°C) mb Fig 2. Normalized total power dissipation as a function of mounting base temperature Rev. 02 — 23 June 2009 PSMN5R0-80PS Min Max - - 100 - 100 Figure 3 - 598 - 270 -55 175 -55 175 - 100 - 598 ≤ ...
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... Transient thermal impedance from junction to mounting base as a function of pulse duration; typical values PSMN5R0-80PS_2 Product data sheet N-channel 80 V 4.7 mΩ standard level MOSFET = ( Conditions see Figure Rev. 02 — 23 June 2009 PSMN5R0-80PS 003aad299 10 μs 100 μ 100 (V) DS Min Typ Max - 0.3 0.56 003aad080 t p δ ...
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... Figure ° MHz see Figure 14; see Figure see Figure 14; see Figure MHz °C; see Figure 0.5 Ω 4.7 Ω R G(ext) Rev. 02 — 23 June 2009 PSMN5R0-80PS Min Typ Max Unit 4 µ 150 µ 100 100 mΩ [2] - 3.7 4.7 mΩ Ω 101 - ...
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... C (pF) 9000 8000 7000 6000 5000 4000 25 °C 3000 (V) GS Fig 8. Input and reverse transfer capacitances as a function of gate-source voltage; typical values Rev. 02 — 23 June 2009 PSMN5R0-80PS Min Typ Max Unit - 0.8 1 116 - nC 003aad082 V ( 5.5 6 ...
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... Fig 10. Drain-source on-state resistance as a function of gate-source voltage; typical values 03aa35 5 V GS(th) (V) max − (V) GS Fig 12. Gate-source threshold voltage as a function of junction temperature Rev. 02 — 23 June 2009 PSMN5R0-80PS 003aad089 (V) GS 003aad280 max typ min 0 60 120 180 T (°C) j © NXP B.V. 2009. All rights reserved ...
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... Fig 14. Gate charge waveform definitions 120 150 180 T (°C) j 003aad085 (pF 100 120 10 Q (nC) G Fig 16. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values Rev. 02 — 23 June 2009 PSMN5R0-80PS GS(pl) V GS(th GS1 GS2 G(tot) 003aaa508 003aad086 C C oss C rss -1 1 ...
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... Fig 17. Source (diode forward) current as a function of source-drain (diode forward) voltage; typical values PSMN5R0-80PS_2 Product data sheet N-channel 80 V 4.7 mΩ standard level MOSFET 100 175 ° ° 0.2 0.4 0.6 0.8 Rev. 02 — 23 June 2009 PSMN5R0-80PS 003aad084 1 1.2 V (V) SD © NXP B.V. 2009. All rights reserved ...
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... 0.7 16.0 6.6 10.3 15.0 2.54 0.4 15.2 5.9 9.7 12.8 REFERENCES JEDEC JEITA SC-46 3-lead TO-220AB Rev. 02 — 23 June 2009 PSMN5R0-80PS mounting base Q c ( max. 3.30 3.8 3.0 2.6 3.0 2.79 3.5 2.7 2.2 EUROPEAN ISSUE DATE PROJECTION ...
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... Various changes to content. PSMN5R0-80PS_1 20090507 PSMN5R0-80PS_2 Product data sheet N-channel 80 V 4.7 mΩ standard level MOSFET Data sheet status Change notice Product data sheet - Objective data sheet - Rev. 02 — 23 June 2009 PSMN5R0-80PS Supersedes PSMN5R0-80PS_1 - © NXP B.V. 2009. All rights reserved ...
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... Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. TrenchMOS — trademark of NXP B.V. http://www.nxp.com salesaddresses@nxp.com Rev. 02 — 23 June 2009 PSMN5R0-80PS © NXP B.V. 2009. All rights reserved ...
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... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2009. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Document identifier: PSMN5R0-80PS_2 All rights reserved. Date of release: 23 June 2009 ...