PSMN5R0-100PS,127 NXP Semiconductors, PSMN5R0-100PS,127 Datasheet - Page 2

• Manufacturer Part Number: PSMN5R0-100PS,127
• Description: MOSFET Power N-Ch 100V 5 mOhms
• Manufacturer: NXP Semiconductors
• Series: -r

Specifications of PSMN5R0-100PS,127

• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 5 mOhms
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 110 A
• Power Dissipation: 338 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Package / Case: TO-220AB
• Gate Charge Qg: 170 nC
• Minimum Operating Temperature: - 55 C
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 5 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 120A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Gate Charge (qg) @ Vgs: 170nC @ 10V
• Input Capacitance (ciss) @ Vds: 9900pF @ 50V
• Power - Max: 338W
• Mounting Type: Through Hole
• Lead Free Status / Rohs Status: Details
• Other names: 934065172127

NXP Semiconductors
2. Pinning information
Table 2.
3. Ordering information
Table 3.
PSMN5R0-100PS
Product data sheet
Pin
1
2
3
mb
Type number
PSMN5R0-100PS
Symbol Description
G
D
S
D
Pinning information
Ordering information
gate
drain
source
mounting base; connected to
drain
Table 1.
[1]
[2]
Package
Name
TO-220AB
Symbol
Dynamic characteristics
Q
Q
Avalanche ruggedness
E
DS(AL)S
GD
G(tot)
Continuous current limited by package.
Measured 3 mm from package.
Quick reference data
Parameter
gate-drain charge V
total gate charge
non-repetitive
drain-source
avalanche energy
Description
plastic single-ended package; heatsink mounted;
1 mounting hole; 3-lead TO-220AB
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 15 April 2011
Simplified outline
SOT78 (TO-220AB)
N-channel 100 V 5 mΩ standard level MOSFET in TO-220
Conditions
V
see
V
I
R
D
…continued
GS
DS
GS
GS
= 120 A; V
Figure 15
= 10 V; I
= 50 V; see
= 10 V; T
= 50 Ω; Unclamped
1 2
mb
3
D
sup
j(init)
= 75 A;
≤ 100 V;
Figure
= 25 °C;
14;
Graphic symbol
PSMN5R0-100PS
mbb076
G
Min
-
-
-
© NXP B.V. 2011. All rights reserved.
D
S
Typ
49
170
-
Version
SOT78
Max Unit
-
-
537
2 of 14
nC
nC
mJ