PSMN5R0-100PS,127 NXP Semiconductors, PSMN5R0-100PS,127 Datasheet - Page 2
![MOSFET Power N-Ch 100V 5 mOhms](/photos/16/7/160729/to220ab_sml.jpg)
PSMN5R0-100PS,127
Manufacturer Part Number
PSMN5R0-100PS,127
Description
MOSFET Power N-Ch 100V 5 mOhms
Manufacturer
NXP Semiconductors
Series
-r
Datasheet
1.PSMN5R0-100PS127.pdf
(14 pages)
Specifications of PSMN5R0-100PS,127
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
5 mOhms
Drain-source Breakdown Voltage
100 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
110 A
Power Dissipation
338 W
Maximum Operating Temperature
+ 175 C
Mounting Style
Through Hole
Package / Case
TO-220AB
Gate Charge Qg
170 nC
Minimum Operating Temperature
- 55 C
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
5 mOhm @ 25A, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
120A
Vgs(th) (max) @ Id
4V @ 1mA
Gate Charge (qg) @ Vgs
170nC @ 10V
Input Capacitance (ciss) @ Vds
9900pF @ 50V
Power - Max
338W
Mounting Type
Through Hole
Lead Free Status / Rohs Status
Details
Other names
934065172127
NXP Semiconductors
2. Pinning information
Table 2.
3. Ordering information
Table 3.
PSMN5R0-100PS
Product data sheet
Pin
1
2
3
mb
Type number
PSMN5R0-100PS
Symbol Description
G
D
S
D
Pinning information
Ordering information
gate
drain
source
mounting base; connected to
drain
Table 1.
[1]
[2]
Package
Name
TO-220AB
Symbol
Dynamic characteristics
Q
Q
Avalanche ruggedness
E
DS(AL)S
GD
G(tot)
Continuous current limited by package.
Measured 3 mm from package.
Quick reference data
Parameter
gate-drain charge V
total gate charge
non-repetitive
drain-source
avalanche energy
Description
plastic single-ended package; heatsink mounted;
1 mounting hole; 3-lead TO-220AB
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 15 April 2011
Simplified outline
SOT78 (TO-220AB)
N-channel 100 V 5 mΩ standard level MOSFET in TO-220
Conditions
V
see
V
I
R
D
…continued
GS
DS
GS
GS
= 120 A; V
Figure 15
= 10 V; I
= 50 V; see
= 10 V; T
= 50 Ω; Unclamped
1 2
mb
3
D
sup
j(init)
= 75 A;
≤ 100 V;
Figure
= 25 °C;
14;
Graphic symbol
PSMN5R0-100PS
mbb076
G
Min
-
-
-
© NXP B.V. 2011. All rights reserved.
D
S
Typ
49
170
-
Version
SOT78
Max Unit
-
-
537
2 of 14
nC
nC
mJ