PSMN4R0-25YLC,115 NXP Semiconductors, PSMN4R0-25YLC,115 Datasheet - Page 9

• Manufacturer Part Number: PSMN4R0-25YLC,115
• Description: MOSFET Power N-CH 25 V 4.5 mOhms LOGIC LEVEL MOSFET
• Manufacturer: NXP Semiconductors
• Series: -r

Specifications of PSMN4R0-25YLC,115

• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 4.5 mOhms
• Drain-source Breakdown Voltage: 25 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 84 A
• Power Dissipation: 61 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Package / Case: LFPAK
• Gate Charge Qg: 22.8 nC
• Minimum Operating Temperature: - 55 C
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 4.5 mOhm @ 20A, 10V
• Drain To Source Voltage (vdss): 25V
• Current - Continuous Drain (id) @ 25° C: 84A
• Vgs(th) (max) @ Id: 1.95V @ 1mA
• Gate Charge (qg) @ Vgs: 22.8nC @ 10V
• Input Capacitance (ciss) @ Vds: 1407pF @ 12V
• Power - Max: 61W
• Mounting Type: Surface Mount
• Lead Free Status / Rohs Status: Details
• Other names: 934065075115

NXP Semiconductors
PSMN4R0-25YLC
Product data sheet
Fig 12. Drain-source on-state resistance as a function
Fig 14. Gate charge waveform definitions
(m)
R
DS on
16
12
8
4
0
of drain current; typical values
0
V
V
V
V
GS(pl)
DS
GS(th)
GS
Q
2.6
20
GS1
I
Q
D
GS
Q
GS2
2.8
40
Q
G(tot)
Q
GD
60
V
GS
3.0
All information provided in this document is subject to legal disclaimers.
003a a f 510
003aaa508
(V) = 3.5
I
D
(A)
4.5
10
Rev. 01 — 2 December 2010
80
N-channel 25 V 4.5 mΩ logic level MOSFET in LFPAK
Fig 13. Normalized drain-source on-state resistance
Fig 15. Gate-source voltage as a function of gate
V
a
(V)
GS
1.5
0.5
10
2
1
0
8
6
4
2
0
-60
factor as a function of junction temperature
charge; typical values
0
0
PSMN4R0-25YLC
5V
10
12V
60
V
GS
=4.5V
V
20
DS
= 20V
120
© NXP B.V. 2010. All rights reserved.
Q
003a a f 517
003a a f 511
G
T
(nC)
j
( C)
10V
180
30
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