PSMN4R0-25YLC,115 NXP Semiconductors, PSMN4R0-25YLC,115 Datasheet - Page 7

• Manufacturer Part Number: PSMN4R0-25YLC,115
• Description: MOSFET Power N-CH 25 V 4.5 mOhms LOGIC LEVEL MOSFET
• Manufacturer: NXP Semiconductors
• Series: -r

Specifications of PSMN4R0-25YLC,115

• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 4.5 mOhms
• Drain-source Breakdown Voltage: 25 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 84 A
• Power Dissipation: 61 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Package / Case: LFPAK
• Gate Charge Qg: 22.8 nC
• Minimum Operating Temperature: - 55 C
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 4.5 mOhm @ 20A, 10V
• Drain To Source Voltage (vdss): 25V
• Current - Continuous Drain (id) @ 25° C: 84A
• Vgs(th) (max) @ Id: 1.95V @ 1mA
• Gate Charge (qg) @ Vgs: 22.8nC @ 10V
• Input Capacitance (ciss) @ Vds: 1407pF @ 12V
• Power - Max: 61W
• Mounting Type: Surface Mount
• Lead Free Status / Rohs Status: Details
• Other names: 934065075115

NXP Semiconductors
Table 6.
PSMN4R0-25YLC
Product data sheet
Symbol
t
t
t
t
Q
Source-drain diode
V
t
Q
t
t
d(on)
r
d(off)
f
rr
a
b
Fig 6.
SD
oss
r
(A)
I
D
80
60
40
20
0
function of drain-source voltage; typical values
Output characteristics; drain current as a
0
10
Characteristics
Parameter
turn-on delay time
rise time
turn-off delay time
fall time
output charge
source-drain voltage
reverse recovery time
recovered charge
reverse recovery rise
time
reverse recovery fall
time
3.5
4.5
1
…continued
2
V
3
GS
Conditions
V
R
V
T
I
see
I
V
V
V
All information provided in this document is subject to legal disclaimers.
S
S
003a a f 508
j
DS
GS
DS
GS
DS
G(ext)
(V) = 2.8
V
= 25 °C
= 20 A; V
= 20 A; dI
DS
Figure 17
= 12 V; R
= 12 V
= 12 V; see
= 0 V; V
= 0 V; I
(V)
3.0
2.6
2.4
2.2
= 4.7 Ω
Rev. 01 — 2 December 2010
4
S
GS
S
DS
/dt = -100 A/µs; V
= 20 A; dI
L
= 0 V; T
= 0.5 Ω; V
= 12 V; f = 1 MHz;
Figure 18
N-channel 25 V 4.5 mΩ logic level MOSFET in LFPAK
Fig 7.
j
S
= 25 °C;
/dt = -100 A/µs;
R
(m)
GS
DS on
16
12
= 4.5 V;
8
4
0
of gate-source voltage; typical values
Drain-source on-state resistance as a function
GS
0
= 0 V;
4
PSMN4R0-25YLC
Min
-
-
-
-
-
-
-
-
-
-
8
Typ
15.9
17.5
24
9.9
7.32
0.8
24.5
16.1
14.9
9.6
12
© NXP B.V. 2010. All rights reserved.
003a a f 509
V
GS
-
-
Max
-
-
-
-
1.1
-
-
-
(V)
16
Unit
ns
ns
ns
ns
nC
V
ns
nC
ns
ns
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