FDMS7620S Fairchild Semiconductor, FDMS7620S Datasheet

MOSFET Power 30V Dual N-Channel PowerTrench MOSFET

FDMS7620S

Manufacturer Part Number
FDMS7620S
Description
MOSFET Power 30V Dual N-Channel PowerTrench MOSFET
Manufacturer
Fairchild Semiconductor
Datasheet

Specifications of FDMS7620S

Configuration
Dual (MOSFET)
Transistor Polarity
Dual N-Channel
Resistance Drain-source Rds (on)
20 mOhms
Forward Transconductance Gfs (max / Min)
22 S
Drain-source Breakdown Voltage
30 V
Continuous Drain Current
10.1 A
Power Dissipation
2.2 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
Power 56
Module Configuration
Dual
Continuous Drain Current Id
22A
Drain Source Voltage Vds
30V
On Resistance Rds(on)
0.0152ohm
Rds(on) Test Voltage Vgs
10V
Lead Free Status / Rohs Status
 Details

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FDMS7620S
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
Company:
Part Number:
FDMS7620S
Quantity:
50
FDMS7620S Rev.C1
©2011 Fairchild Semiconductor Corporation
MOSFET Maximum Ratings
Thermal Characteristics
Package Marking and Ordering Information
FDMS7620S
Dual N-Channel PowerTrench
Q1: 30 V, 10.1 A, 20.0 mΩ Q2: 30 V, 12.4 A, 11.2 mΩ
Features
Q1: N-Channel
Q2: N-Channel
V
V
I
E
P
T
R
R
D
J
DS
GS
AS
D
θJA
θJA
Max r
Max r
Max r
Max r
Pinout optimized for simple PCB design
Thermally efficient dual Power 56 Package
RoHS Compliant
, T
Symbol
Device Marking
STG
FDMS7620S
DS(on)
DS(on)
DS(on)
DS(on)
= 20.0 mΩ at V
= 30.0 mΩ at V
= 11.2 mΩ at V
= 14.2 mΩ at V
Top
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Single Pulse Avalanche Energy
Power Dissipation for Single Operation
Power Dissipation for Single Operation
Operating and Storage Junction Temperature Range
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
GS
GS
GS
GS
FDMS7620S
= 10 V, I
= 10 V, I
= 4.5 V, I
= 4.5 V, I
Power 56
-Continuous (Silicon limited)
-Pulsed
-Continuous (Package limited)
-Continuous
Device
D
D
D
D
= 12.4 A
= 10.1 A
= 7.5 A
= 10.9 A
T
A
D1
= 25°C unless otherwise noted
D1
Parameter
D1
Bottom
®
G1
D1
Power 56
Package
MOSFET
S1/D2
S2
1
Pin1
General Description
This device includes two specialized MOSFETs in a unique dual
Power 56 package. It is designed to provide an optimal synchro-
nous buck power stage in terms of efficiency and PCB utilization.
The low switching loss “High Side” MOSFET is complementory
by a low conduction loss “Low Side” SyncFET.
Applications
Synchronous Buck Converter for:
S2
Notebook System Power
General Purpose Point of Load
S2
G2
Reel Size
13 ”
T
T
T
T
T
C
C
A
A
A
(Note 3)
(Note 4)
= 25 °C
= 25 °C
= 25 °C
= 25°C
= 25°C
5
6
7
8
Tape Width
125
Q 2
2.2
1.0
10.1
57
±20
12 mm
Q1
30
13
26
27
9
1a
1a
1c
1c
-55 to +150
Q 1
120
2.5
1.0
12.4
50
±20
Q2
30
22
42
45
21
1b
1b
1d
www.fairchildsemi.com
1d
3000 units
March 2011
Quantity
4
3
2
1
Units
°C/W
mJ
°C
W
V
V
A

Related parts for FDMS7620S

FDMS7620S Summary of contents

Page 1

... Thermal Resistance, Junction to Ambient θJA Package Marking and Ordering Information Device Marking Device FDMS7620S FDMS7620S ©2011 Fairchild Semiconductor Corporation FDMS7620S Rev.C1 ® MOSFET General Description = 10 This device includes two specialized MOSFETs in a unique dual = 7.5 A Power 56 package designed to provide an optimal synchro- D nous buck power stage in terms of efficiency and PCB utilization ...

Page 2

... Turn-Off Delay Time d(off) t Fall Time f Q Total Gate Charge g(TOT) Q Total Gate Charge g(TOT) Q Gate to Source Charge gs Q Gate to Drain “Miller” Charge gd ©2011 Fairchild Semiconductor Corporation FDMS7620S Rev. 25°C unless otherwise noted J Test Conditions = 250 μ mA 250 μA, referenced to 25° mA, referenced to 25° ...

Page 3

... Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0 N-ch device, the negative Vgs rating is for low duty cycle pulse ocurrence only. No continuous rating is implied based on starting Q2 based on starting ©2011 Fairchild Semiconductor Corporation FDMS7620S Rev. 25°C unless otherwise noted J Test Conditions 10 12.4 A ...

Page 4

... T J Figure 3. Normalized On Resistance vs Junction Temperature 27 μ PULSE DURATION = DUTY CYCLE = 0.5% MAX 150 1.5 2.0 2.5 3 GATE TO SOURCE VOLTAGE (V) GS Figure 5. Transfer Characteristics ©2011 Fairchild Semiconductor Corporation FDMS7620S Rev. 25°C unless otherwise noted 4 μ 3 2.0 2.5 3 100 125 150 0 - ...

Page 5

... Q , GATE CHARGE (nC) g Figure 7. Gate Charge Characteristics 125 J 1 0.001 0.01 0 TIME IN AVALANCHE (ms) AV Figure 9. Unclamped Inductive Switching Capability 1000 100 Figure 11. ©2011 Fairchild Semiconductor Corporation FDMS7620S Rev. 25°C unless otherwise noted J 1000 100 100 0. PULSE WIDTH (sec) Single Pulse Maximum Power Dissipation ...

Page 6

... Typical Characteristics (Q1 N-Channel) 2 DUTY CYCLE-DESCENDING ORDER 0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 0.001 0.001 - Figure 12. ©2011 Fairchild Semiconductor Corporation FDMS7620S Rev. 25°C unless otherwise noted J SINGLE PULSE 125 C/W θ JA (Note 1b RECTANGULAR PULSE DURATION (sec) Junction-to-Ambient Transient Thermal Response Curve 6 ...

Page 7

... PULSE DURATION = 80 s DUTY CYCLE = 0.5% MAX 125 1.5 2.0 2 GATE TO SOURCE VOLTAGE (V) GS Figure 17. Transfer Characteristics ©2011 Fairchild Semiconductor Corporation FDMS7620S Rev. °C unless otherwise noted 3 μ s 1.5 2.0 Figure 14. Normalized on-Resistance vs Drain 50 75 100 125 150 - 0.01 0.001 3 ...

Page 8

... Q , GATE CHARGE (nC) g Figure 19. Gate Charge Characteristics 125 J 1 0.001 0.01 0 TIME IN AVALANCHE (ms) AV Figure 21. Unclamped Inductive Switching Capability 1000 100 ©2011 Fairchild Semiconductor Corporation FDMS7620S Rev. 25°C unless otherwise noted J 3000 1000 100 0. PULSE WIDTH (sec) Figure 23. Single Pulse Maximum Power ...

Page 9

... Typical Characteristics (Q2 N-Channel) 2 DUTY CYCLE-DESCENDING ORDER 0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 0.001 - Figure 24. Junction-to-Ambient Transient Thermal Response Curve ©2011 Fairchild Semiconductor Corporation FDMS7620S Rev. °C unless otherwise noted J SINGLE PULSE 120 C/W θ JA (Note 1b RECTANGULAR PULSE DURATION (sec) 9 ...

Page 10

... FDMS7620S di/dt = 300 100 TIME (ns) Figure 25. FDMS7620S SyncFET body diode reverse recovery characteristic ©2011 Fairchild Semiconductor Corporation FDMS7620S Rev.C1 (continued) Schottky barrier diodes exhibit significant leakage at high tem- perature and high reverse voltage. This will increase the power in the device μ ...

Page 11

... Dimensional Outline and Pad Layout PIN#1 QUADRANT MAX 0.10 C 0.08 C 0.05 0.00 1 PIN #1 IDENT 0.66 0.55 0.340 0. 1.27 0.46 0. 0.05 C ©2011 Fairchild Semiconductor Corporation FDMS7620S Rev. (5X) TOP VIEW (0.20 ) SIDE VIEW SEATING PL ANE 2.67 0. 3.85 0.48 3.75 0.38 (5X) ...

Page 12

... Datasheet Identification Product Status Advance Information Formative / In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production ©2011 Fairchild Semiconductor Corporation FDMS7620S Rev.C1 Power-SPM™ ® PowerTrench SM PowerXS™ Programmable Active Droop™ ® QFET QS™ Quiet Series™ RapidConfigure™ ...

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