FDMS3602S Fairchild Semiconductor, FDMS3602S Datasheet - Page 7

• Manufacturer Part Number: FDMS3602S
• Description: MOSFET Power 25V Dual N-Channel PowerTrench MOSFET
• Manufacturer: Fairchild Semiconductor

Specifications of FDMS3602S

• Configuration: Dual (MOSFET & SyncFET)
• Transistor Polarity: Dual N-Channel
• Resistance Drain-source Rds (on): 5.6 mOhms
• Forward Transconductance Gfs (max / Min): 67 S
• Drain-source Breakdown Voltage: 25 V
• Continuous Drain Current: 15 A
• Power Dissipation: 2.2 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: Power 56
• Module Configuration: Dual
• Continuous Drain Current Id: 40A
• Drain Source Voltage Vds: 25V
• On Resistance Rds(on): 0.0044ohm
• Rds(on) Test Voltage Vgs: 10V
• Lead Free Status / Rohs Status: Details

FDMS3602S Rev.C5
©2011 Fairchild Semiconductor Corporation
Typical Characteristics (Q2 N-Channel)
100
80
60
40
20
100
0
1.6
1.4
1.2
1.0
0.8
80
60
40
20
0.0
Figure 14. On- Region Characteristics
0
Figure 16. Normalized On-Resistance
1.5
-75
Figure 18. Transfer Characteristics
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
V
I
V
DS
-50
D
GS
= 26 A
vs Junction Temperature
V
= 5 V
0.2
DS
= 10 V
2.0
V
T
-25
,
GS
J
DRAIN TO SOURCE VOLTAGE (V)
,
, GATE TO SOURCE VOLTAGE (V)
JUNCTION TEMPERATURE (
V
GS
V
0
= 4 V
0.4
GS
T
2.5
V
J
GS
T
= 4.5 V
= 25
J
V
25
= 125
= 10 V
GS
μ
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
s
o
= 3.5 V
C
50
0.6
o
C
3.0
75
V
GS
T
J
0.8
o
100 125 150
= -55
= 3 V
C )
3.5
o
C
μ
s
1.0
4.0
T
J
7
= 25 °C unless otherwise noted
Figure 15. Normalized on-Resistance vs Drain
200
100
0.1
10
12
10
1
8
6
4
2
0
0.0
8
6
4
2
0
Figure 17. On-Resistance vs Gate to
Forward Voltage vs Source Current
0
2
Figure 19. Source to Drain Diode
V
GS
V
= 0 V
Current and Gate Voltage
V
GS
0.2
SD
= 3 V
, BODY DIODE FORWARD VOLTAGE (V)
20
V
GS
Source Voltage
I
D
4
,
T
,
GATE TO SOURCE VOLTAGE (V)
T
J
DRAIN CURRENT (A)
T
0.4
J
= 125
J
= 125
= 25
T
40
J
T
o
= -55
J
o
C
o
C
C
= 25
0.6
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
6
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
o
C
o
V
V
I
C
D
GS
GS
60
= 26 A
= 4.5 V
= 3.5 V
0.8
8
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80
V
V
1.0
GS
GS
= 10 V
= 4 V
μ
s
μ
s
1.2
100
10