MT46H8M32LFB5-6:A Micron Technology Inc, MT46H8M32LFB5-6:A Datasheet - Page 95
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MT46H8M32LFB5-6:A
Manufacturer Part Number
MT46H8M32LFB5-6:A
Description
Manufacturer
Micron Technology Inc
Type
DDR SDRAMr
Datasheet
1.MT46H8M32LFB5-6A.pdf
(96 pages)
Specifications of MT46H8M32LFB5-6:A
Organization
8Mx32
Density
256Mb
Address Bus
14b
Access Time (max)
6.5/5ns
Maximum Clock Rate
166MHz
Operating Supply Voltage (typ)
1.8V
Package Type
VFBGA
Operating Temp Range
0C to 70C
Operating Supply Voltage (max)
1.95V
Operating Supply Voltage (min)
1.7V
Supply Current
120mA
Pin Count
90
Mounting
Surface Mount
Operating Temperature Classification
Commercial
Lead Free Status / Rohs Status
Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MT46H8M32LFB5-6:A
Manufacturer:
MICRON
Quantity:
20 000
Company:
Part Number:
MT46H8M32LFB5-6:A TR
Manufacturer:
Micron Technology Inc
Quantity:
10 000
Revision History for Commands, Operations, and Timing Diagrams
Update – 01/09
Update – 07/08
Update – 05/08
Update – 03/08
Update – 12/07
PDF: 09005aef834bf85b
256mb_mobile_ddr_sdram_t36n.pdf - Rev. H 11/09 EN
• Initialization: Updated item 1 relative to CKE.
• SELF REFRESH Command section: Updated description.
• Truth Tables (Current State Bank n – Command to Bank n and Current State Bank n –
• Self Refresh: Updated description.
• Truth Table, Current State Bank n – Command to Bank m: Corrected note 3b,
• Auto Precharge: Added third paragraph regading
• Bank Write – Without Auto Precharge: Corrected note 4.
• Functional Description, Burst Definition table, Extended Mode Register, and through-
• Output Drive Strength: Added three-quarter drive strength and deleted one-eighth
• Extended Mode Register Figure: Expanded driver strength section to include three-
• Updated note 2 for the following figures:
• Updated note 3 for the following figures:
• Removed final note for the following figures:
• Figure 43, WRITE-to-PRECHARGE – Odd Number of Data, Interrupting: Extended
• Concurrent Auto Precharge: Updated figure references.
• Figure 19, Extended Mode Register: Updated to include mid-strength driver informa-
Command to Bank m): Clarified note 1.
changed "disabled" to "enabled."
out document as appropriate: Added BL 16.
drive strength; added 37 ohm (deleted 100 ohm).
quarter drive strength.
– Consecutive READ Bursts
– Nonconsecutive READ Bursts
– Random READ Accesses
– Terminating a READ Burst
– READ-to-PRECHARGE
– READ-to-WRITE
– Random WRITE Cycles
– WRITE-to-READ
– WRITE-to-READ – Odd Number of Data, Interrupting
– WRITE-to-PRECHARGE – Interrupting
t
tion.
WR to coincide with T5 transition.
95
256Mb: x16, x32 Mobile LPDDR SDRAM
Micron Technology, Inc. reserves the right to change products or specifications without notice.
t
RAS lock-out.
©2008 Micron Technology, Inc. All rights reserved.
Revision History