MT46H8M32LFB5-6:A Micron Technology Inc, MT46H8M32LFB5-6:A Datasheet - Page 85
![](/photos/31/34/313421/mfg557-90-vfbga_sml.jpg)
MT46H8M32LFB5-6:A
Manufacturer Part Number
MT46H8M32LFB5-6:A
Description
Manufacturer
Micron Technology Inc
Type
DDR SDRAMr
Datasheet
1.MT46H8M32LFB5-6A.pdf
(96 pages)
Specifications of MT46H8M32LFB5-6:A
Organization
8Mx32
Density
256Mb
Address Bus
14b
Access Time (max)
6.5/5ns
Maximum Clock Rate
166MHz
Operating Supply Voltage (typ)
1.8V
Package Type
VFBGA
Operating Temp Range
0C to 70C
Operating Supply Voltage (max)
1.95V
Operating Supply Voltage (min)
1.7V
Supply Current
120mA
Pin Count
90
Mounting
Surface Mount
Operating Temperature Classification
Commercial
Lead Free Status / Rohs Status
Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MT46H8M32LFB5-6:A
Manufacturer:
MICRON
Quantity:
20 000
Company:
Part Number:
MT46H8M32LFB5-6:A TR
Manufacturer:
Micron Technology Inc
Quantity:
10 000
Figure 46: Bank Write – With Auto Precharge
Command
PDF: 09005aef834bf85b
256mb_mobile_ddr_sdram_t36n.pdf - Rev. H 11/09 EN
BA0, BA1
Address
DQS
DQ
CK#
CKE
A10
DM
CK
1
t
t
IS
IS
NOP
T0
t
4
t
IH
IH
Notes:
t
t
IS
ACTIVE
IS
Bank x
Row
Row
T1
t
IH
t
IH
7. Refer to Figure 29 (page 66) and Figure 30 (page 67) for DQS and DQ timing details.
8. D
1. NOP commands are shown for ease of illustration; other commands may be valid at
2. BL = 4 in the case shown.
3. Enable auto precharge.
4. D
t
CK
these times.
t
OUT
IN
t
RCD
RAS
n = data-out from column n.
NOP
n = data out from column n.
T2
4
t
CH
t
CL
t
t
WRITE
WPRES
Bank x
IS
Col n
T3
Note 3
t
t
IH
DQSS (NOM)
2
85
t
DS
NOP
D
T4
256Mb: x16, x32 Mobile LPDDR SDRAM
IN
t
WPRE
4
t
DH
Micron Technology, Inc. reserves the right to change products or specifications without notice.
T4n
t
DQSL
NOP
T5
t
4
DQSH
T5n
t
WPST
NOP
T6
4
Don’t Care
©2008 Micron Technology, Inc. All rights reserved.
Auto Precharge
t
WR
NOP
T7
4
Transitioning Data
NOP
T8
4
t
RP