MT46H8M32LFB5-6:A Micron Technology Inc, MT46H8M32LFB5-6:A Datasheet - Page 71
![](/photos/31/34/313421/mfg557-90-vfbga_sml.jpg)
MT46H8M32LFB5-6:A
Manufacturer Part Number
MT46H8M32LFB5-6:A
Description
Manufacturer
Micron Technology Inc
Type
DDR SDRAMr
Datasheet
1.MT46H8M32LFB5-6A.pdf
(96 pages)
Specifications of MT46H8M32LFB5-6:A
Organization
8Mx32
Density
256Mb
Address Bus
14b
Access Time (max)
6.5/5ns
Maximum Clock Rate
166MHz
Operating Supply Voltage (typ)
1.8V
Package Type
VFBGA
Operating Temp Range
0C to 70C
Operating Supply Voltage (max)
1.95V
Operating Supply Voltage (min)
1.7V
Supply Current
120mA
Pin Count
90
Mounting
Surface Mount
Operating Temperature Classification
Commercial
Lead Free Status / Rohs Status
Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MT46H8M32LFB5-6:A
Manufacturer:
MICRON
Quantity:
20 000
Company:
Part Number:
MT46H8M32LFB5-6:A TR
Manufacturer:
Micron Technology Inc
Quantity:
10 000
Figure 33: Write – DM Operation
PDF: 09005aef834bf85b
256mb_mobile_ddr_sdram_t36n.pdf - Rev. H 11/09 EN
Command
BA0, BA1
Address
DQS
DQ
CK#
CKE
A10
DM
CK
6
t
t
IS
IS
NOP
T0
t
1
t
IH
IH
Notes:
t
t
ACTIVE
IS
Bank x
IS
Row
Row
T1
t
t
IH
IH
1. NOP commands are shown for ease of illustration; other commands may be valid at
2. BL = 4 in the case shown.
3. PRE = PRECHARGE.
4. Disable auto precharge.
5. Bank x at T8 is “Don’t Care” if A10 is HIGH at T8.
6. D
t
CK
these times.
t
t
IN
RCD
RAS
n = data-in from column n.
NOP
T2
1
t
CH
t
CL
t
WPRES
t
WRITE
IS
Bank x
Note 4
Col n
T3
t
IH
t
2
DQSS (NOM)
t
71
DS
NOP
T4
D
256Mb: x16, x32 Mobile LPDDR SDRAM
IN
t
WPRE
1
t
DH
T4n
Micron Technology, Inc. reserves the right to change products or specifications without notice.
t
DQSL
NOP
D
T5
IN
t
DQSH
1
T5n
t
WPST
NOP
T6
1
Don’t Care
©2008 Micron Technology, Inc. All rights reserved.
WRITE Operation
t
NOP
WR
T7
1
1
Transitioning Data
One bank
All banks
Bank x
PRE
T8
3
5
t
RP