MT46H8M32LFB5-6:A Micron Technology Inc, MT46H8M32LFB5-6:A Datasheet - Page 73
![](/photos/31/34/313421/mfg557-90-vfbga_sml.jpg)
MT46H8M32LFB5-6:A
Manufacturer Part Number
MT46H8M32LFB5-6:A
Description
Manufacturer
Micron Technology Inc
Type
DDR SDRAMr
Datasheet
1.MT46H8M32LFB5-6A.pdf
(96 pages)
Specifications of MT46H8M32LFB5-6:A
Organization
8Mx32
Density
256Mb
Address Bus
14b
Access Time (max)
6.5/5ns
Maximum Clock Rate
166MHz
Operating Supply Voltage (typ)
1.8V
Package Type
VFBGA
Operating Temp Range
0C to 70C
Operating Supply Voltage (max)
1.95V
Operating Supply Voltage (min)
1.7V
Supply Current
120mA
Pin Count
90
Mounting
Surface Mount
Operating Temperature Classification
Commercial
Lead Free Status / Rohs Status
Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MT46H8M32LFB5-6:A
Manufacturer:
MICRON
Quantity:
20 000
Company:
Part Number:
MT46H8M32LFB5-6:A TR
Manufacturer:
Micron Technology Inc
Quantity:
10 000
Figure 35: Consecutive WRITE-to-WRITE
Figure 36: Nonconsecutive WRITE-to-WRITE
PDF: 09005aef834bf85b
256mb_mobile_ddr_sdram_t36n.pdf - Rev. H 11/09 EN
Command
Command
Address
Address
DQS
DQS
DQ
DQ
CK#
CK#
DM
DM
CK
CK
3
3
Notes:
Notes:
WRITE
WRITE
Bank,
Col b
Bank,
Col b
T0
T0
1, 2
t
1. Each WRITE command can be to any bank.
2. An uninterrupted burst of 4 is shown.
3. D
1. Each WRITE command can be to any bank.
2. An uninterrupted burst of 4 is shown.
3. D
t
1,2
DQSS (NOM)
DQSS (NOM)
IN
IN
b (n) = data-in for column b (n).
b (n) = data-in for column b (n).
NOP
NOP
D
D
T1
T1
IN
IN
T1n
T1n
D
D
IN
IN
WRITE
Bank,
Col n
D
NOP
D
T2
T2
IN
IN
1, 2
73
T2n
T2n
D
D
IN
256Mb: x16, x32 Mobile LPDDR SDRAM
IN
WRITE
Micron Technology, Inc. reserves the right to change products or specifications without notice.
Bank,
NOP
D
Col n
T3
T3
IN
1,2
Don’t Care
Don’t Care
T3n
D
IN
D
NOP
T4
T4
D
NOP
IN
IN
T4n
T4n
D
D
IN
IN
Transitioning Data
Transitioning Data
©2008 Micron Technology, Inc. All rights reserved.
WRITE Operation
D
T5
NOP
T5
NOP
IN
T5n
D
IN