2SK3594-01 Fuji Semiconductor, 2SK3594-01 Datasheet
2SK3594-01
Manufacturer Part Number
2SK3594-01
Description
MOSFET, Power; N-Ch; VDSS 200V; RDS(ON) 50 Milliohms; ID +/-45A; TO-220AB; PD 270W
Manufacturer
Fuji Semiconductor
Datasheet
1.2SK3594-01.pdf
(1 pages)
Specifications of 2SK3594-01
Channel Type
N-Channel
Current, Drain
±45 A
Gate Charge, Total
51 nC
Package Type
TO-220AB
Polarization
N-Channel
Power Dissipation
270 W
Resistance, Drain To Source On
50 Milliohms
Temperature, Operating, Maximum
+150 °C
Time, Turn-off Delay
53 ns
Time, Turn-on Delay
20 ns
Transconductance, Forward
25 S
Voltage, Breakdown, Drain To Source
200 V
Voltage, Forward, Diode
1.1 V
Voltage, Gate To Source
±30 V
Lead Free Status / Rohs Status
RoHS Compliant part
Electrostatic Device
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
2SK3594-01
Manufacturer:
FUJITSU
Quantity:
12 500
2SK3594-01
FUJI POWER MOSFET
Super FAP-G Series
*1 L=205µH, Vcc=48V,Tc=25°C, See to avalanche Energy Graph
*3 I
Thermalcharacteristics
Item
Maximum ratings and characteristic
(Tc=25°C unless otherwise specified)
Item
Drain-source breakdown voltaget
Gate threshold voltage
Gate-source leakage current
Drain-source on-state resistance
Forward transcondutance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on time t
Turn-off time t
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Avalanche capability
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
Thermal resistance
Zero gate voltage drain current
Drain-source voltage
Continuous drain current
Pulsed drain current
Gate-source voltage
Non-repetitive Avalanche current
Maximum Avalanche Energy
Maximum Drain-Source dV/dt
Peak Diode Recovery dV/dt
Max. power dissipation
Operating and storage
temperature range
Item
Electrical characteristics (T
Features
High speed switching
Low on-resistance
No secondary breadown
Low driving power
Avalanche-proof
Applications
Switching regulators
UPS (Uninterruptible Power Supply)
DC-DC converters
F
= <
-I
D
, -di/dt=50A/µs, Vcc BV
on
off
= <
DSS
c
=25°C unless otherwise specified)
, Tch 150°C
V
V
I
I
V
I
E
dV
dV/dt
P
T
T
D
D(puls]
AS *2
Symbol
ch
stg
DSX *5
AS *1
D
DS
GS
DS
R
R
Symbol
= <
Symbol
V
V
I
R
g
C
C
C
td
t
td
t
Q
Q
Q
I
V
t
Q
I
GSS
AV
th(ch-c)
th(ch-a)
Ta=25 °C
Tc=25 °C
f
DSS
r
rr
/dt
fs
GS(th)
*3
(BR)DSS
DS(on)
iss
oss
rss
G
GS
SD
GD
rr
(on)
(off)
*4
Absolute maximum ratings
*4 V
Ratings
DS
-55 to +150
Test Conditions
Test Conditions
I
I
V
V
f=1MHz
V
V
R
V
I
V
L=205 µ H T
I
I
-di/dt=100A/µs
V
V
V
channel to ambient
I
I
channel to case
D
D
D
F
F
D
D
±180
+150
DS
GS
CC
GS
GS
GS
DS
DS
GS
CC
=30A V
=30A V
< =
= 250 µ A
= 250 µ A
=30A
=15A
=15A
200
170
±45
±30
258.9
270
200V
=10
45
20
=200V V
=160V V
=75V
=0V
=48V I
=10V
=10V
=±30V
=100V
5
2.02
*2 Tch 150°C
V
V
GS
GS
*5 V
ch
D
GS
DS
V
=0V T
=15A
=0V
=25°C
DS
GS
GS
V
V
=10V
=25V
DS
GS
=0V
= <
=0V
=0V
GS
T
=V
=0V
ch
N-CHANNEL SILICON POWER MOSFET
=-30V
ch
=25°C
kV/µs
kV/µs
W
°C
°C
Unit
mJ
GS
V
V
A
A
V
A
=25°C
T
T
ch
ch
=125°C
=25°C
TO-220AB
Outline Drawings
Equivalent circuit schematic
Gate(G)
Min.
Min.
200
12.5
45
3.0
1960
Typ.
Typ.
260
10
50
25
18
20
17
53
19
51
15
16
1.10
0.19
1.4
Source(S)
Drain(D)
2940
Max.
(mm)
250
100
390
62.0
Max.
25
66
27
30
26
80
29
76.5
22.5
24
0.463
5.0
1.65
Units
Units
°C/W
°C/W
ns
V
V
µA
nA
m
S
pF
nC
A
V
µs
µC
1
Related parts for 2SK3594-01
Image
Part Number
Description
Manufacturer
Datasheet
Request
R
Part Number:
Description:
MOSFET, Power; N-Ch; VDSS 60V; RDS(ON) 7.5 Milliohms; ID +/-80A; TO-3P; PD 125W; VGS +/
Manufacturer:
Fuji Semiconductor
Datasheet:
Part Number:
Description:
MOSFET, Power; N-Ch; VDSS 500V; RDS(ON) 0.2Ohm; ID +/-25A; TO-247; PD 335W; VGS +/-30V
Manufacturer:
Fuji Semiconductor
Datasheet:
Part Number:
Description:
MOSFET, Power; N-Ch; VDSS 900V; RDS(ON) 1.08 Ohms; ID +/-40A; TO-247; PD 270W; VGS +/-3
Manufacturer:
Fuji Semiconductor
Datasheet:
Part Number:
Description:
MOSFET, Power; N-Ch; VDSS 600V; RDS(ON) 0.29Ohm; ID +/-21A; TO-3PF; PD 160W; VGS +/-30V
Manufacturer:
Fuji Semiconductor
Datasheet:
Part Number:
Description:
MOSFET, Power; N-Ch; VDSS 600V; RDS(ON) 0.12Ohm; ID +/-43A; TO-247; PD 600W; VGS +/-30V
Manufacturer:
Fuji Semiconductor
Datasheet:
Part Number:
Description:
MOSFET, Power; N-Ch; VDSS 60V; RDS(ON) 5.7 Milliohms; ID +/-100A; TO-3PF; PD 125W; VF 1
Manufacturer:
Fuji Semiconductor
Datasheet:
Part Number:
Description:
MOSFET, Power; N-Ch; VDSS 500V; RDS(ON) 0.09Ohm; ID +/-52A; TO-247; PD 600W; VGS +/-30V
Manufacturer:
Fuji Semiconductor
Datasheet:
Part Number:
Description:
MOSFET, Power; N-Ch; VDSS 800V; RDS(ON) 1.46 Ohms; ID +/-7A; TO-220AB; PD 195W; VGS +/-
Manufacturer:
Fuji Semiconductor
Datasheet:
Part Number:
Description:
MOSFET, Power; N-Ch; VDSS 800V; RDS(ON) 1.62 Ohms; ID +/-7A; TO-3P; PD 125W; VGS +/-35V
Manufacturer:
Fuji Semiconductor
Datasheet:
Part Number:
Description:
MOSFET, Power; N-Ch; VDSS 900V; RDS(ON) 1.54 Ohms; ID +/-7A; TO-247; PD 195W; VGS +/-30
Manufacturer:
Fuji Semiconductor
Datasheet:
Part Number:
Description:
MOSFET, Power; N-Ch; VDSS 250V; RDS(ON) 75 Milliohms; ID +/-37A; TO-220AB; PD 270W; -55
Manufacturer:
Fuji Semiconductor
Datasheet:
Part Number:
Description:
MOSFET, Power; N-Ch; VDSS 500V; RDS(ON) 0.29Ohm; ID +/-19A; TO-220AB; PD 270W; VGS +/-3
Manufacturer:
Fuji Semiconductor
Datasheet:
Part Number:
Description:
MOSFET, Power; N-Ch; VDSS 60V; RDS(ON) 5 Milliohms; ID +/-80A; TO-220; PD 135W; VGS +/-
Manufacturer:
Fuji Semiconductor
Datasheet:
Part Number:
Description:
MOSFET, Power; N-Ch; VDSS 600V; RDS(ON) 0.58Ohm; ID +/-12A; TO-220AB; PD 195W; VGS +/-3
Manufacturer:
Fuji Semiconductor
Datasheet:
Part Number:
Description:
MOSFET, Power; N-Ch; VDSS 500V; RDS(ON) 0.33Ohm; ID +/-20A; TO-3P; PD 150W; VGS +/-30V
Manufacturer:
Fuji Semiconductor
Datasheet: