2SK2765-01 Fuji Semiconductor, 2SK2765-01 Datasheet
2SK2765-01
Manufacturer Part Number
2SK2765-01
Description
MOSFET, Power; N-Ch; VDSS 800V; RDS(ON) 1.62 Ohms; ID +/-7A; TO-3P; PD 125W; VGS +/-35V
Manufacturer
Fuji Semiconductor
Datasheet
1.2SK2765-01.pdf
(1 pages)
Specifications of 2SK2765-01
Channel Type
N-Channel
Current, Drain
±7 A
Package Type
TO-3P
Polarization
N-Channel
Power Dissipation
125 W
Resistance, Drain To Source On
1.62 Ohms
Temperature, Operating, Maximum
+150 °C
Time, Turn-off Delay
80 ns
Time, Turn-on Delay
25 ns
Transconductance, Forward
4 S
Voltage, Breakdown, Drain To Source
800 V
Voltage, Drain To Source
800 V
Voltage, Forward, Diode
1 V
Voltage, Gate To Source
±35 V
Lead Free Status / Rohs Status
RoHS Compliant part
Electrostatic Device
Available stocks
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Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
2SK2765-01
Manufacturer:
FUJI
Quantity:
14 529
Company:
Part Number:
2SK2765-01
Manufacturer:
FUJITSU
Quantity:
12 500
Part Number:
2SK2765-01
Manufacturer:
FUJITSU/富士通
Quantity:
20 000
2SK2765-01
N-CHANNEL SILICON POWER MOSFET
FAP-2S Series
Item
Thermalcharacteristics
Maximum ratings and characteristic
(Tc=25°C unless otherwise specified)
Item
Drain-source breakdown voltaget
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Forward transcondutance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on time t
Turn-off time t
Avalanche capability
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
Thermal resistance
Drain-source voltage
Continuous drain current
Pulsed drain current
Gate-source voltage
Repetitive or non-repetitive
Maximum Avalanche Energy
Max. power dissipation
Operating and storage
temperature range
Item
Features
High speed switching
Low on-resistance
No secondary breadown
Low driving power
Avalanche-proof
Applications
Switching regulators
UPS (Uninterruptible Power Supply)
DC-DC converters
Electrical characteristics (T
off
on
c
=25°C unless otherwise specified)
Symbol
V
I
I
I
E
P
T
T
V
D
D(puls]
AR *2
D
ch
stg
AS *1
DS
GS
R
R
Symbol
Symbol
V
V
I
R
g
C
C
C
td
t
td
t
I
V
t
Q
I
th(ch-c)
th(ch-a)
GSS
AV
f
DSS
r
rr
fs
(BR)DSS
GS(th)
DS(on)
iss
oss
rss
SD
(on)
(off)
rr
*1 L=10.0mH, Vcc=80V
Absolute maximum ratings
Ratings
-55 to +150
Test Conditions
V
V
R
Test Conditions
I
I
V
V
V
V
f=1MHz
L=100 µ H T
I
I
-di/dt=100A/µs
V
I
I
D
D
F
F
channel to ambient
D
D
channel to case
CC
GS
GS
+150
DS
GS
GS
DS
GS
=2xI
=I
=1mA
=1mA
=3.5A
=3.5A
800
±28
±35
267
125
DR
=0V
=600V I
=10V
=10
±7
=800V
=±35V
=25V
=0V
7
DR
V
GS
V
V
V
GS
V
ch
=0V
V
V
GS
DS
D
*2 Tch=150°C
DS
DS
=25°C
GS
=7A
=0V T
=10V
=25V
=0V
=V
=0V
T
ch
GS
<
Unit
=25°C
°C
°C
mJ
ch
W
V
A
A
V
A
=25°C
T
T
ch
ch
=25°C
=125°C
TO-3P
Outline Drawings
FUJI POWER MOSFET
Equivalent circuit schematic
Min.
Min.
Gate(G)
800
3.5
2.0
7
Typ.
Typ.
900
130
900
10
10
70
25
90
80
50
10.0
4.0
0.2
1.62
4.0
1.0
Source(S)
Drain(D)
1350
Max.
Max.
35.0
500
100
200
140
120
110
1.0
40
80
4.5
1.0
2.0
1.5
Units
Units
°C/W
°C/W
ns
V
V
µA
mA
nA
S
pF
A
V
ns
µC
1
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