2SK2690-01 Fuji Semiconductor, 2SK2690-01 Datasheet
2SK2690-01
Manufacturer Part Number
2SK2690-01
Description
MOSFET, Power; N-Ch; VDSS 60V; RDS(ON) 7.5 Milliohms; ID +/-80A; TO-3P; PD 125W; VGS +/
Manufacturer
Fuji Semiconductor
Datasheet
1.2SK2690-01.pdf
(4 pages)
Specifications of 2SK2690-01
Application
For switching
Channel Type
N-Channel
Current, Drain
±80 A
Current, Drain, Pulse
±320 mA
Operating And Storage Temperature
-55 to +150 °C
Package Type
TO-3P
Polarization
N-Channel
Power Dissipation
125 W
Resistance, Drain To Source On
7.5 Milliohms
Temperature, Operating, Maximum
+150 °C
Time, Turn-off Delay
190 ns
Time, Turn-on Delay
15 ns
Transconductance, Forward
55 S
Voltage, Breakdown, Drain To Source
60 V
Voltage, Diode Forward
1.15 V (Typ.)
Voltage, Drain To Source
60 V
Voltage, Forward, Diode
1.15 V
Voltage, Gate To Source
±20 V
Lead Free Status / Rohs Status
RoHS Compliant part
Electrostatic Device
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
2SK2690-01
Manufacturer:
FUJITSU
Quantity:
12 500
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