2SK3501-01 Fuji Semiconductor, 2SK3501-01 Datasheet
2SK3501-01
Manufacturer Part Number
2SK3501-01
Description
MOSFET, Power; N-Ch; VDSS 600V; RDS(ON) 0.58Ohm; ID +/-12A; TO-220AB; PD 195W; VGS +/-3
Manufacturer
Fuji Semiconductor
Datasheet
1.2SK3501-01.pdf
(1 pages)
Specifications of 2SK3501-01
Channel Type
N-Channel
Current, Drain
±12 A
Gate Charge, Total
30 nC
Package Type
TO-220AB
Polarization
N-Channel
Power Dissipation
195 W
Resistance, Drain To Source On
0.58 Ohm
Temperature, Operating, Maximum
+150 °C
Time, Turn-off Delay
35 ns
Time, Turn-on Delay
17 ns
Transconductance, Forward
8 S
Voltage, Breakdown, Drain To Source
600 V
Voltage, Forward, Diode
1 V
Voltage, Gate To Source
±30 V
Lead Free Status / Rohs Status
RoHS Compliant part
Electrostatic Device
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
2SK3501-01
Manufacturer:
FUJITSU
Quantity:
12 500
*3 I
2SK3501-01
Super FAP-G Series
*1 L=2.33mH, Vcc=60V, See to Avalanche Energy Graph
Thermalcharacteristics
Item
Maximum ratings and characteristic
(Tc=25°C unless otherwise specified)
Thermal resistance
Item
Drain-source breakdown voltaget
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Forward transcondutance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on time t
Turn-off time t
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Avalanche capability
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
Drain-source voltage
Continuous drain current
Pulsed drain current
Gate-source voltage
Repetitive or non-repetitive
Maximum Avalanche Energy
Maximum Drain-Source dV/dt
Peak Diode Recovery dV/dt
Max. power dissipation
Operating and storage
temperature range
Item
F
Electrical characteristics (T
Features
High speed switching
Low on-resistance
No secondary breadown
Low driving power
Avalanche-proof
Applications
Switching regulators
UPS (Uninterruptible Power Supply)
DC-DC converters
= <
-I
D
, -di/dt=50A/µs, Vcc BV
off
on
= <
DSS
c
, Tch 150°C
=25°C unless otherwise specified)
V
I
I
V
I
E
dV
dV/dt
P
T
T
D
D(puls]
AR *2
Symbol
ch
stg
AS *1
D
DS
GS
DS
R
R
= <
Symbol
Symbol
V
V
I
R
g
C
C
C
td
t
td
t
Q
Q
Q
I
V
t
Q
GSS
AV
th(ch-c)
th(ch-a)
Ta=25 °C
Tc=25 °C
r
f
rr
I
/dt
fs
DSS
(BR)DSS
GS(th)
oss
*3
DS(on)
iss
rss
G
GS
GD
SD
(on)
(off)
rr
*4
*4 VDS 600V
Absolute maximum ratings
Ratings
-55 to +150
Test Conditions
V
V
R
*2 Tch 150°C
Test Conditions
I
I
V
V
f=1MHz
V
I
V
L=2.33mH T
I
I
-di/dt=100A/µs
V
V
V
I
I
channel to ambient
D
D
D
F
F
channel to case
D
D
< =
CC
GS
+150
DS
GS
GS
CC
GS
=10A V
=10A V
DS
DS
GS
=1mA
= 250 µ A
=10A
=5A
=5A
600
±12
±48
±30
183
195
=300V I
=10V
=10
12
20
=600V V
=480V V
=±30V
=25V
=0V
=250V
=10V
5
2.02
= <
V
N-CHANNEL SILICON POWER MOSFET
V
GS
GS
GS
DS
V
V
ch
=0V T
=10V
=25V
D
=0V
DS
GS
GS
GS
V
=5A
=25°C
DS
=0V
=0V
=0V
=0V
T
=V
ch
ch
=25°C
kV/µs
kV/µs
W
°C
°C
Unit
GS
mJ
V
A
A
V
A
=25°C
T
T
ch
ch
=125°C
=25°C
FUJI POWER MOSFET
TO-220AB
Outline Drawings [mm]
Equivalent circuit schematic
Gate(G)
Min.
Min.
600
12
3.0
4
1200
Typ.
Typ.
140
10
17
15
35
30
10
11
0.58
8
6
7
1.00
0.75
5.0
Source(S)
Drain(D)
1800
Max.
250
100
210
62.0
Max.
25
26
23
53
45
16.5
15
11
0.641
5.0
0.75
9
1.50
Units
Units
°C/W
°C/W
200303
ns
V
V
µA
nA
S
pF
nC
A
V
µs
µC
1
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