2SK3529-01 Fuji Semiconductor, 2SK3529-01 Datasheet
2SK3529-01
Manufacturer Part Number
2SK3529-01
Description
MOSFET, Power; N-Ch; VDSS 800V; RDS(ON) 1.46 Ohms; ID +/-7A; TO-220AB; PD 195W; VGS +/-
Manufacturer
Fuji Semiconductor
Datasheet
1.2SK3529-01.pdf
(1 pages)
Specifications of 2SK3529-01
Application
For switching regulators, UPS (Uninterruptible Power Supply), DC-DC converters.
Channel Type
N-Channel
Current, Drain
±7 A
Gate Charge, Total
21.5 nC
Operating And Storage Temperature
150 °C
Package Type
TO-220AB
Polarization
N-Channel
Power Dissipation
195 W
Resistance, Drain To Source On
1.46 Ohms
Resistance, Thermal, Junction To Case
0.640 °C⁄W (Max.)
Temperature, Operating, Maximum
+150 °C
Thermal Resistance, Junction To Ambient
62 °C⁄W
Time, Turn-off Delay
40 ns
Time, Turn-on Delay
21 ns
Transconductance, Forward
8.2 S
Voltage, Breakdown, Drain To Source
800 V
Voltage, Diode Forward
0.9 V (Typ.)
Voltage, Drain To Source
800 V
Voltage, Forward, Diode
0.9 V
Voltage, Gate To Source
±30 V
Lead Free Status / Rohs Status
RoHS Compliant part
Electrostatic Device
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
2SK3529-01
Manufacturer:
FJUI
Quantity:
4 250
Company:
Part Number:
2SK3529-01
Manufacturer:
FUJITSU
Quantity:
12 500
2SK3529-01
Super FAP-G Series
*1 L=8.8mH, Vcc=80V, Tch=25°C See to Avalanche Energy Graph
*3 I
FUJI POWER MOSFET
Thermalcharacteristics
Item
Thermal resistance
Item
Drain-source breakdown voltaget
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Forward transcondutance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on time t
Turn-off time t
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Avalanche capability
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
Maximum ratings and characteristic
(Tc=25°C unless otherwise specified)
Drain-source voltage
Continuous drain current
Pulsed drain current
Gate-source voltage
Repetitive or non-repetitive
Maximum Avalanche Energy
Maximum Drain-Source dV/dt
Peak Diode Recovery dV/dt
Max. power dissipation
Operating and storage
temperature range
Item
Electrical characteristics (T
Features
High speed switching
Low on-resistance
No secondary breadown
Low driving power
Avalanche-proof
Applications
Switching regulators
UPS (Uninterruptible Power Supply)
DC-DC converters
F
= <
-I
D
, -di/dt=50A/µs, Vcc BV
off
on
= <
DSS
c
=25°C unless otherwise specified)
, Tch 150°C
V
V
I
I
V
I
E
dV
dV/dt
P
T
T
D
D(puls]
AR
Symbol
ch
stg
DSX *5
AS
D
DS
GS
DS
R
R
Symbol
= <
Symbol
V
V
I
R
g
C
C
C
td
t
td
t
Q
Q
Q
I
V
t
Q
GSS
AV
th(ch-c)
th(ch-a)
Ta=25 °C
Tc=25 °C
f
I
r
rr
/dt
fs
GS(th)
DSS
(BR)DSS
DS(on)
iss
oss
rss
G
GS
SD
GD
rr
(on)
(off)
*1
*4
*2
*3
*4 VDS 800V
Absolute maximum ratings
Ratings
-55 to +150
Test Conditions
V
V
R
Test Conditions
I
I
V
V
V
V
V
f=1MHz
V
I
V
L=8.8mH T
I
I
-di/dt=100A/µs
I
I
channel to ambient
<
channel to case
=
D
D
D
D
D
F
F
+150
CC
GS
GS
DS
DS
GS
DS
GS
CC
GS
=7A V
=7A V
= 250 µ A
= 250 µ A
=7A
=3.5A
=3.5A
800
800
±28
±30
235.3
195
=600V I
=10
±7
40
=800V V
=640V V
=10V
=±30V
=25V
=0V
=10V
=400V
7
5
2.02
N-CHANNEL SILICON POWER MOSFET
*2 Tch 150°C
GS
GS
*5 V
V
V
ch
=0V T
=0V
V
GS
DS
D
=25°C
DS
GS
GS
=3.5A
V
V
GS
=10V
=25V
= <
DS
GS
=0V
=0V
=0V
T
=-30V
=V
=0V
ch
ch
kV/µs
kV/µs
W
°C
°C
mJ
=25°C
Unit
=25°C
V
V
A
A
V
A
GS
T
T
ch
ch
=125°C
=25°C
TO-220AB
Outline Drawings [mm]
Equivalent circuit schematic
Gate(G)
Min.
Min.
800
3.0
4.1
7
Typ.
Typ.
740
105
21
40
21.5
1.46
8.2
7
8
9.6
3
7
0.90
2.3
7.0
Source(S)
Drain(D)
1110
Max.
250
100
160
62.0
Max.
25
10.5
31.5
12
60
14.4
32
10.5
0.640
5.0
1.90
4.5
1.50
Units
Units
°C/W
°C/W
ns
V
V
µA
nA
S
pF
nC
A
V
µs
µC
1
Related parts for 2SK3529-01
Image
Part Number
Description
Manufacturer
Datasheet
Request
R
Part Number:
Description:
MOSFET, Power; N-Ch; VDSS 60V; RDS(ON) 7.5 Milliohms; ID +/-80A; TO-3P; PD 125W; VGS +/
Manufacturer:
Fuji Semiconductor
Datasheet:
Part Number:
Description:
MOSFET, Power; N-Ch; VDSS 500V; RDS(ON) 0.2Ohm; ID +/-25A; TO-247; PD 335W; VGS +/-30V
Manufacturer:
Fuji Semiconductor
Datasheet:
Part Number:
Description:
MOSFET, Power; N-Ch; VDSS 900V; RDS(ON) 1.08 Ohms; ID +/-40A; TO-247; PD 270W; VGS +/-3
Manufacturer:
Fuji Semiconductor
Datasheet:
Part Number:
Description:
MOSFET, Power; N-Ch; VDSS 600V; RDS(ON) 0.29Ohm; ID +/-21A; TO-3PF; PD 160W; VGS +/-30V
Manufacturer:
Fuji Semiconductor
Datasheet:
Part Number:
Description:
MOSFET, Power; N-Ch; VDSS 600V; RDS(ON) 0.12Ohm; ID +/-43A; TO-247; PD 600W; VGS +/-30V
Manufacturer:
Fuji Semiconductor
Datasheet:
Part Number:
Description:
MOSFET, Power; N-Ch; VDSS 60V; RDS(ON) 5.7 Milliohms; ID +/-100A; TO-3PF; PD 125W; VF 1
Manufacturer:
Fuji Semiconductor
Datasheet:
Part Number:
Description:
MOSFET, Power; N-Ch; VDSS 500V; RDS(ON) 0.09Ohm; ID +/-52A; TO-247; PD 600W; VGS +/-30V
Manufacturer:
Fuji Semiconductor
Datasheet:
Part Number:
Description:
MOSFET, Power; N-Ch; VDSS 800V; RDS(ON) 1.62 Ohms; ID +/-7A; TO-3P; PD 125W; VGS +/-35V
Manufacturer:
Fuji Semiconductor
Datasheet:
Part Number:
Description:
MOSFET, Power; N-Ch; VDSS 900V; RDS(ON) 1.54 Ohms; ID +/-7A; TO-247; PD 195W; VGS +/-30
Manufacturer:
Fuji Semiconductor
Datasheet:
Part Number:
Description:
MOSFET, Power; N-Ch; VDSS 250V; RDS(ON) 75 Milliohms; ID +/-37A; TO-220AB; PD 270W; -55
Manufacturer:
Fuji Semiconductor
Datasheet:
Part Number:
Description:
MOSFET, Power; N-Ch; VDSS 500V; RDS(ON) 0.29Ohm; ID +/-19A; TO-220AB; PD 270W; VGS +/-3
Manufacturer:
Fuji Semiconductor
Datasheet:
Part Number:
Description:
MOSFET, Power; N-Ch; VDSS 60V; RDS(ON) 5 Milliohms; ID +/-80A; TO-220; PD 135W; VGS +/-
Manufacturer:
Fuji Semiconductor
Datasheet:
Part Number:
Description:
MOSFET, Power; N-Ch; VDSS 600V; RDS(ON) 0.58Ohm; ID +/-12A; TO-220AB; PD 195W; VGS +/-3
Manufacturer:
Fuji Semiconductor
Datasheet:
Part Number:
Description:
MOSFET, Power; N-Ch; VDSS 500V; RDS(ON) 0.33Ohm; ID +/-20A; TO-3P; PD 150W; VGS +/-30V
Manufacturer:
Fuji Semiconductor
Datasheet:
Part Number:
Description:
MOSFET, Power; N-Ch; VDSS 150V; RDS(ON) 31 Milliohms; ID +/-57A; TO-220AB; PD 270W
Manufacturer:
Fuji Semiconductor
Datasheet: