2SK3682-01 Fuji Semiconductor, 2SK3682-01 Datasheet
2SK3682-01
Manufacturer Part Number
2SK3682-01
Description
MOSFET, Power; N-Ch; VDSS 500V; RDS(ON) 0.29Ohm; ID +/-19A; TO-220AB; PD 270W; VGS +/-3
Manufacturer
Fuji Semiconductor
Datasheet
1.2SK3682-01.pdf
(1 pages)
Specifications of 2SK3682-01
Application
For switching regulators, UPS (uninterrupted Power Supply), DC-DC converters.
Channel Type
N-Channel
Current, Drain
±19 A
Gate Charge, Total
34 nC
Operating And Storage Temperature
150 °C
Package Type
TO-220AB
Polarization
N-Channel
Power Dissipation
270 W
Resistance, Drain To Source On
0.29 Ohm
Resistance, Thermal, Junction To Case
0.463 °C⁄W (Max.)
Temperature, Operating, Maximum
+150 °C
Thermal Resistance, Junction To Ambient
62 °C⁄W
Time, Turn-off Delay
56 ns
Time, Turn-on Delay
29 ns
Transconductance, Forward
15 S
Voltage, Breakdown, Drain To Source
500 V
Voltage, Diode Forward
1.2 V (Typ.)
Voltage, Drain To Source
500 V
Voltage, Forward, Diode
1.2 V
Voltage, Gate To Source
±30 V
Lead Free Status / Rohs Status
RoHS Compliant part
Electrostatic Device
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
2SK3682-01
Manufacturer:
FUJITSU
Quantity:
12 500
2SK3682-01
Super FAP-G Series
*2 See to Avalanche Energy Graph
*3 I
FUJI POWER MOSFET
Drain-source voltage
Continuous drain current
Pulsed drain current
Gate-source voltage
Non-Repetitive
Maximum avalanche current
Non-Repetitive
Maximum avalanche energy
Maximum Drain-Source dV/dt
Peak diode recovery dV/dt
Max. power dissipation
Operating and storage
temperature range
Thermalcharacteristics
Item
F
Item
Drain-source breakdown voltaget
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Forward transcondutance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on time t
Turn-off time t
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Avalanche capability
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
Thermal resistance
Item
Maximum ratings and characteristic
(Tc=25°C unless otherwise specified)
Electrical characteristics (T
Features
< =
High speed switching
No secondary breadown
Avalanche-proof
Applications
Switching regulators
UPS (Uninterruptible Power Supply)
-I
D
, -di/dt=50A/µs, V
off
on
CC
< =
BV
DSS
c
Symbol Ratings
, Tch 150°C
V
V
I
I
V
I
E
dV
dV/dt
P
T
T
D
AS
D(puls]
=25°C unless otherwise specified)
AS
D
ch
stg
DS
DSX
GS
DS
< =
R
R
Low on-resistance
DC-DC converters
/dt
Symbol
Low driving power
I
Symbol
V
V
I
R
g
C
C
C
td
t
td
t
Q
Q
Q
I
V
t
Q
DSS
GSS
AV
th(ch-c)
th(ch-a)
r
f
rr
fs
(BR)DSS
GS(th)
oss
DS(on)
iss
rss
G
GS
GD
SD
(on)
(off)
rr
-55 to +150
+150
500
500
±19
±76
±30
245.3
270
19
20
Absolute maximum ratings
5
2.02
Test Conditions
V
V
R
V
V
V
I
I
Test Conditions
I
I
V
V
f=1MHz
V
I
V
L=1.25mH T
I
I
-di/dt=100A/µs
channel to ambient
channel to case
D
D
D
D
D
F
F
CC
GS
GS
DS
DS
GS
DS
GS
CC
GS
=19A V
=19A V
= 250 µ A
= 250 µ A
=9.5A
=9.5A
=19A
=300V I
=10V
=10
=500V V
=400V V
=±30V
=25V
=0V
=250V
=10V
Unit
mJ
kV/s
kV/µs
W
°C
°C
V
V
A
A
V
A
N-CHANNEL SILICON POWER MOSFET
GS
V
V
GS
V
GS
DS
D
ch
=0V T
=0V
GS
GS
DS
=9.5A
V
Tch 150°C
L=1.25mH
V
VDS 500V
*3
Ta=25°C
Tc=25°C
V
V
=25°C
=10V
=25V
Remarks
GS
CC
GS
DS
=0V
=0V
=0V
T
< =
=0V
=V
=-30V
=50V *2
ch
< =
ch
=25°C
GS
=25°C
T
T
ch
ch
=125°C
=25°C
TO-220AB
Outline Drawings [mm]
Equivalent circuit schematic
Gate(G)
Min.
Min.
500
19
3.0
7.5
1560
Typ.
Typ.
230
10
15
29
13
56
34
13
10
0.29
8
8
1.20
0.57
7.0
Source(S)
Drain(D)
2340
Max.
250
100
345
62.0
Max.
25
12
43.5
19.5
84
12
51
19.5
15
0.463
5.0
0.38
1.50
Units
Units
°C/W
°C/W
ns
V
V
µA
nA
S
pF
nC
A
V
µs
µC
1
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