2SK3590-01 Fuji Semiconductor, 2SK3590-01 Datasheet
2SK3590-01
Manufacturer Part Number
2SK3590-01
Description
MOSFET, Power; N-Ch; VDSS 150V; RDS(ON) 31 Milliohms; ID +/-57A; TO-220AB; PD 270W
Manufacturer
Fuji Semiconductor
Datasheet
1.2SK3590-01.pdf
(1 pages)
Specifications of 2SK3590-01
Current, Drain
±57 A
Gate Charge, Total
52 nC
Package Type
TO-220AB
Polarization
N-Channel
Power Dissipation
270 W
Resistance, Drain To Source On
31 Milliohms
Temperature, Operating, Maximum
+150 °C
Time, Turn-off Delay
50 ns
Time, Turn-on Delay
20 ns
Transconductance, Forward
26 S
Voltage, Breakdown, Drain To Source
150 V
Voltage, Forward, Diode
1.1 V
Voltage, Gate To Source
±30 V
Lead Free Status / Rohs Status
RoHS Compliant part
Electrostatic Device
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
2SK3590-01
Manufacturer:
FUJITSU
Quantity:
12 500
2SK3590-01
FUJI POWER MOSFET
Super FAP-G Series
*1 L=123µH, Vcc=48V, See to Avalanche Energy Graph
*3 I
Thermalcharacteristics
Item
Maximum ratings and characteristic
(Tc=25°C unless otherwise specified)
Thermal resistance
Item
Drain-source breakdown voltaget
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Forward transcondutance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on time t
Turn-off time t
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Avalanche capability
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
Drain-source voltage
Continuous drain current
Pulsed drain current
Gate-source voltage
Non-repetitive Avalanche current
Maximum Avalanche Energy
Maximum Drain-Source dV/dt
Peak Diode Recovery dV/dt
Max. power dissipation
Operating and storage
temperature range
Item
Electrical characteristics (T
Features
High speed switching
Low on-resistance
No secondary breadown
Low driving power
Avalanche-proof
Applications
Switching regulators
UPS (Uninterruptible Power Supply)
DC-DC converters
F
= <
-I
D
, -di/dt=50A/µs, Vcc BV
off
on
= <
DSS
c
, Tch 150°C
=25°C unless otherwise specified)
V
V
I
I
V
I
E
dV
dV/dt
P
T
T
D
D(puls]
AS *2
Symbol
ch
stg
DSX *5
AS *1
D
DS
GS
DS
R
R
Symbol
= <
Symbol
V
V
I
R
g
C
C
C
td
t
td
t
Q
Q
Q
I
V
t
Q
GSS
AV
th(ch-c)
th(ch-a)
Ta=25 °C
Tc=25 °C
f
I
r
rr
/dt
fs
GS(th)
DSS
*3
(BR)DSS
DS(on)
iss
oss
rss
G
GS
SD
GD
rr
(on)
(off)
*4
Absolute maximum ratings
*4 V
Ratings
DS
-55 to +150
Test Conditions
V
V
R
V
V
V
Test Conditions
I
I
I
I
V
V
f=1MHz
V
I
V
L=123 µ H T
I
I
-di/dt=100A/µs
channel to ambient
channel to case
D
D
*2 Tch 150°C
D
D
D
F
F
±228
+150
CC
GS
GS
DS
DS
GS
DS
GS
CC
GS
=40A V
=40A V
= 250 µ A
= 250 µ A
=20A
=20A
=40A
< =
150
120
±57
±30
272.5
270
150V
=10
57
20
=150V V
=120V V
=48V I
=10V
=±30V
=75V
=0V
=10V
=75V
5
2.02
= <
V
V
GS
GS
*5 V
D
GS
ch
DS
V
=20A
=0V T
=0V
=25°C
DS
GS
GS
=10V
=25V
V
V
GS
DS
GS
=0V
=0V
=0V
T
=V
=0V
=-30V
ch
N-CHANNEL SILICON POWER MOSFET
ch
kV/µs
kV/µs
W
°C
°C
Unit
=25°C
mJ
V
V
A
A
V
A
GS
=25°C
T
T
ch
ch
=125°C
=25°C
TO-220AB
Outline Drawings
Equivalent circuit schematic
Gate(G)
Min.
Min.
150
13
57
3.0
Typ.
1940
Typ.
310
10
31
26
24
20
26
50
20
52
15
18
1.10
0.14
0.77
Source(S)
Drain(D)
Max.
(mm)
2910
62.0
Max.
250
100
465
0.463
25
41
36
30
39
75
30
78
22.5
27
5.0
1.65
Units
Units
°C/W
°C/W
ns
V
V
µA
nA
m
S
pF
nC
A
V
µs
µC
1
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