YG902C2R Fuji Semiconductor, YG902C2R Datasheet - Page 3

• Manufacturer Part Number: YG902C2R
• Description: Diode; 0.95 V @ 5 A; 10 A; 200; 50 A; 100 muA (Max.); 35 ns (Max.); TO-22OF15
• Manufacturer: Fuji Semiconductor

Specifications of YG902C2R

• Configuration: Dual
• Current, Forward: 10 A
• Current, Reverse: 100 μA
• Current, Surge: 50 A
• Dimensions: 10 mm ± 0.5 mm L x 4.5 mm ± 0.2 mm W x 15 mm ± 0.3 mm H
• Package Type: TO-22OF15
• Primary Type: Schottky Barrier
• Resistance, Thermal, Junction To Case: 3.5 °C/W
• Speed, Switching: Super High
• Temperature, Junction, Maximum: +150 °C
• Temperature, Operating: -40 to +150 °C
• Termination: Surface Mount
• Time, Recovery: 35 ns
• Voltage, Reverse: 200 V
• Lead Free Status / Rohs Status: RoHS Compliant part Electrostatic Device

YG902C2R
LOW LOSS SUPER HIGH SPEED DIODE
Weight
Low V
Super high speed switching.
High reaibility by planer design.
High speed power switching
Absolute Maximum Ratings
Repetitive Peak Renerse Voltage
Repetitive Peak Surge Reverse Voltage
Isolating Voltage
Average Output Current
Suege Current
Operating Junction Temperature
Storage Temperature
Electrical Characteristics (Ta=25°C Unless otherwise specified )
Mechanical Characteristics
Mounting torque
Forward Voltage Drop **
Reverse Current **
Reverse recovery time
Thermal Resistance
Features
Applications
Maximum Ratings and Characteristics
F
Item
Item
Symbol
Symbol
R
V
V
V
T
I
trr
I
V
T
R
FSM
I
th(j-c)
RRM
RSM
iso
O
stg
F
j
Recommended torque
I
V
I
Junction to case
F
F
duty=1/2, Tc=115°C
Square wave
Terminals to Case,
AC. 1min.
Sine wave 10ms
R
=0.1A,I
=5A
=V
Conditions
Conditions
RRM
R
=0.2A,Irec=0.05A
(200V / 10A TO-22OF15)
JEDEC
EIAJ
Connection Diagram
Outline Drawings
1
10
±0.5
*
0.3 to 0.5
Out put current of centertap full wave connection.
-40 to +150
-40 to +150
1.2
0.7
2.54
Rating
1500
±0.2
ø3.2
±0.2
200
200
Max.
±0.2
2.3
10*
50
100
35
+0.2
-0.1
3.5
0.95
SC-67
2
**
Rating per element
Unit
Unit
N · m
0.6
2.7
4.5
2.7
°C/W
3
°C
°C
µA
V
V
V
g
A
A
ns
±0.2
V
+0.2
±0.2
±0.2
-0
A-228