NTE56006 NTE Electronics, Inc., NTE56006 Datasheet
NTE56006
Manufacturer Part Number
NTE56006
Description
TRIAC; TO-220; 400 V; 15 A @ 90 degC; 2 degC/W; -40 degC; 125 degC; 500 mW @
Manufacturer
NTE Electronics, Inc.
Datasheet
1.NTE56006.pdf
(2 pages)
Specifications of NTE56006
Channel Type
N
Current, Dc Gate-trigger
50 mA (Max.)
Current, Dc Holding
6 mA (Typ.)
Current, On-state, Average, Maximum
15 A
Current, On-state, Rms, Maximum
15 A
Dissipation, Gate-power, Average
500 mW @ 80°C
Package Type
TO-220
Resistance, Thermal, Junction To Case
2 °C⁄W
Temperature, Operating, Maximum
125 °C
Temperature, Operating, Minimum
-40 °C
Voltage, Dc Gate-trigger
0.9 V (Typ.)
Voltage, Repetitive Peak Off State
400
The NTE56004 thru NTE56010 series of TRIACs are designed primarily for full–wave AC control ap-
plications, such as solid–state relays, motor controls, heating controls and power supplies; or wherev-
er full–wave silicon gate controlled solid–state devices are needed. TRIAC type thyristors switch from
a blocking to a conducting state for either polarity of applied anode voltage with positive or negative
gate triggering.
Features:
D Blocking Voltage from 200 to 800 Volts
D All Diffused and Glass Passivated Junctions
D Small, Rugged, TO220 package for Low Thermal Resistance, High Heat Dissipation and Durability
D Gate Triggering specified in Four Quadrants
Absolute Maximum Ratings:
Peak Repetitive Off–State Voltage, (T
Peak Gate Voltage, V
On–State Current RMS (Full Cycle Sine Wave 50 to 60Hz,T
Circuit Fusing (t = 8.3ms) I
Peak Surge Current (One Full Cycle, 60Hz, T
Peak Gate Power (T
Average Gate Power (T
Peak Gate Current, I
Operating Junction Temperature Range, T
Storage Temperature Range, T
Thermal Resistance, Junction–to–Case, R
NTE56004
NTE56006
NTE56008
NTE56010
Preceded and followed by rated current
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
C
GM
GM
= +80 C, Pulse Width = 2 s), P
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= +80 C, t = 8.3ms), P
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
2
t
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NTE56004 thru NTE56010
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
J
TRIAC, 15 Amp
= –40 to 125 C), V
J
thJC
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
C
= +80 C), I
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
G(AV)
GM
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
TSM
DRM
C
= +90 C), I
T(RMS)
. . . . . . . . . . .
–40 to +125 C
–40 to +150 C
500mW
2 C/W
93A
200V
400V
600V
800V
150A
20W
10V
15A
2A
2
s
Related parts for NTE56006
Image
Part Number
Description
Manufacturer
Datasheet
Request
R
Part Number:
Description:
TRANSISTOR, N-CHANNEL; N-CHANNEL; 1.2 OHMS (TYP.); 60V; +/- 20V; 115MA DRAIN
Manufacturer:
NTE Electronics, Inc.
Part Number:
Description:
TRIAC; TO-3; 600 V; 200 mA @ 25 degC/5 mA @ 125 degC; 40 A @ 0 degC to 125 degC;
Manufacturer:
NTE Electronics, Inc.
Datasheet:
Part Number:
Description:
TRIAC; Isolated TO48; 600 V; 4 mA (Max.); 40 A; 40 A; 1 degC/W; -65 degC; 110
Manufacturer:
NTE Electronics, Inc.
Datasheet:
Part Number:
Description:
MOSFET; N-Ch; VDSS 100V; RDS(ON) 0.077Ohm; ID 28A; TO-220; PD 150W; VGS +/-20V; Qg 69nC
Manufacturer:
NTE Electronics, Inc.
Datasheet:
Part Number:
Description:
TRIAC, Isolated Tab; TO-220; 600 V; 2 mA ( Max.); 10 A; 2.2 V (Max.); 2.5 degC/
Manufacturer:
NTE Electronics, Inc.
Datasheet:
Part Number:
Description:
DIAC; 32 V (Typ.); 250 mW; 100; 25 muA (Max.); DO-35; -40 degC; 125 degC
Manufacturer:
NTE Electronics, Inc.
Datasheet:
Part Number:
Description:
TRIAC; Isolated TO48; 400 V; 4 mA (Max.); 40 A; 40 A; 2.1 degC/W; -40 degC; 10
Manufacturer:
NTE Electronics, Inc.
Datasheet:
Part Number:
Description:
TRIAC; TO-220; 20 A; 800 V; 0.5 mA (Max.); 16 A @ 67 degC; 55 K/W; 120 degC; 5
Manufacturer:
NTE Electronics, Inc.
Datasheet:
Part Number:
Description:
MOSFET; N-Ch; VDSS 200V; RDS(ON) 0.085Ohm; ID 30A; TO-247; PD 190W; VGS +/-20V; gFS 12Mh
Manufacturer:
NTE Electronics, Inc.
Datasheet:
Part Number:
Description:
MOSFET; N-Ch; VDSS 60V; RDS(ON) 0.028Ohm; ID 50A; TO-220; PD 150W; VGS +/-20V; gFS 15Mho
Manufacturer:
NTE Electronics, Inc.
Datasheet:
Part Number:
Description:
MOSFET; N-Ch; VDSS 500V; RDS(ON) 1.5 Ohms; ID 4.5A; TO-220; PD 74W; VGS +/-20V; Qg 38nC
Manufacturer:
NTE Electronics, Inc.
Datasheet:
Part Number:
Description:
MOSFET, Power; N-Ch; VDSS 100V; RDS(ON) 0.1Ohm; ID 14A; TO-220; PD 77W; VGS +/-20V; -55d
Manufacturer:
NTE Electronics, Inc.
Datasheet:
Part Number:
Description:
MOSFET, Power; N-Ch; VDSS 100V; RDS(ON) 0.27Ohm; ID 9.2A; TO-220; PD 50W; VGS +/-20V
Manufacturer:
NTE Electronics, Inc.
Datasheet:
Part Number:
Description:
MOSFET, Power; N-Ch; VDSS 800V; RDS(ON) 2.7 Ohms; ID 4A; PD 125W; VGS +/-30V; gFS 4.3Mh
Manufacturer:
NTE Electronics, Inc.
Datasheet:
Part Number:
Description:
MOSFET; N-Ch; VDSS 900V; RDS(ON) 1.2 Ohms; ID 8A; TO-3P; PD 150W; VGS +/-30V; gFS 5Mhos
Manufacturer:
NTE Electronics, Inc.
Datasheet:
NTE56006 Summary of contents
Page 1
... NTE56006 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...
Page 2
Electrical Characteristics (T otherwise noted) Characteristics Peak Forward or Reverse Blocking Current (Rated Gate open) DRM RRM Peak On–State Voltage ( Peak; Pulse Width = 1 to 2ms, TM Duty Cycle 2%) ...