NTE2376 NTE Electronics, Inc., NTE2376 Datasheet
NTE2376
Manufacturer Part Number
NTE2376
Description
MOSFET; N-Ch; VDSS 200V; RDS(ON) 0.085Ohm; ID 30A; TO-247; PD 190W; VGS +/-20V; gFS 12Mh
Manufacturer
NTE Electronics, Inc.
Datasheet
1.NTE2376.pdf
(3 pages)
Specifications of NTE2376
Channel Type
N-Channel
Current, Drain
30 A
Fall Time
62 ns (Typ.)
Gate Charge, Total
140 nC
Mounting And Package Type
M3 Screw Mounting
Operating And Storage Temperature
-55 to +150 °C
Package Type
TO-247
Polarization
N-Channel
Power Dissipation
190 W
Resistance, Drain To Source On
0.085 Ohm
Resistance, Thermal, Junction To Case
0.65 °C⁄W
Temperature, Operating, Maximum
+150 °C
Temperature, Operating, Minimum
-55 °C
Thermal Resistance, Junction To Ambient
40 °C⁄W
Time, Rise
86 ns (Typ.)
Time, Turn-off Delay
70 ns
Time, Turn-on Delay
16 ns
Transconductance, Forward
12 Mhos
Voltage, Breakdown, Drain To Source
200 V
Voltage, Forward, Diode
2 V
Voltage, Gate To Source
±20 V
Lead Free Status / Rohs Status
RoHS Compliant part
Features:
D Dynamic dv/dt Rating
D Repetitive Avalanche Rated
D Isolated Central Mounting Hole
D Fast Switching
D Ease of Paralleling
D Simple Drive Requirements
Absolute Maximum Ratings:
Continuous Drain Current (V
Pulsed Drain Current (Note 1), I
Power Dissipation (T
Gate–to–Source Voltage, V
Single Pulse Avalanche Energy (Note 2), E
Avalanche Current (Note 1), I
Repetitive Avalanche Energy (Note 1), E
Peak Diode Recovery dv/dt (Note 3), dv/dt
Operating Junction Temperature Range, T
Storage Temperature Range, T
Lead Temperature (During Soldering, 1.6mm from case for 10sec), T
Mounting Torque (6–32 or M3 Screw)
Thermal Resistance, Junction–to–Case, R
Thermal Resistance, Junction–to–Ambient, R
Typical Thermal Resistance, Case–to–Sink (Flat, Greased Surface), R
Note 1. Repetitive rating; pulse width limited by maximum junction temperature.
Note 2. V
Note 3. I
T
T
Derate Linearly Above 25 C
C
C
SD
= +25 C
= +100 C
DD
= 50V, starting T
30A, di/dt
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
C
= +25 C), P
190A/ s, V
GS
GS
AR
J
N–Ch, Enhancement Mode
stg
= +25 C, L = 683 H, R
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= 10V), I
DM
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
D
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
High Speed Switch
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
DD
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
D
AR
J
thJC
V
NTE2376
MOSFET
AS
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
(BR)DSS
thJA
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
, T
J
G
= 25 , I
+150 C
AS
= 30A
L
thCS
. . . . . . . . . . . . . . . . .
. . . . . . . . . . .
10 lbfin (1.1Nm)
–55 to +150 C
–55 to +150 C
0.65 C/W
0.24 C/W
1.5W/ C
40 C/W
+300 C
410mJ
190W
5V/ns
19mJ
120A
30A
19A
20V
30A
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NTE2376 Summary of contents
Page 1
... Thermal Resistance, Junction–to–Ambient, R Typical Thermal Resistance, Case–to–Sink (Flat, Greased Surface), R Note 1. Repetitive rating; pulse width limited by maximum junction temperature. Note 50V, starting T DD Note 3. I 30A, di/dt 190A NTE2376 MOSFET N–Ch, Enhancement Mode High Speed Switch = 10V ...
Page 2
Electrical Characteristics: (T Parameter Drain–to–Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain–to–Source On–Resistance Gate Threshold Voltage Forward Transconductance Drain–to–Source Leakage Current Gate–to–Source Forward Leakage Gate–to–Source Reverse Leakage Total Gate Charge Gate–to–Source Charge Gate–to–Drain (“Miller”) Charge Turn–On Delay Time Rise ...
Page 3
Dia Max .215 (5.45) Note: Drain connected to metal part of mounting surface. .626 (15.9) Max .157 (4.0) .047 (1. .197 (5.0) See Note .787 (20.0) .559 (14.2) Min .094 (2.4) TO247 ...