NTE66 NTE Electronics, Inc., NTE66 Datasheet
NTE66
Manufacturer Part Number
NTE66
Description
MOSFET, Power; N-Ch; VDSS 100V; RDS(ON) 0.1Ohm; ID 14A; TO-220; PD 77W; VGS +/-20V; -55d
Manufacturer
NTE Electronics, Inc.
Datasheet
1.NTE66.pdf
(3 pages)
Specifications of NTE66
Current, Drain
14 A
Gate Charge, Total
17 nC
Package Type
TO-220
Polarization
N-Channel
Power Dissipation
77 W
Resistance, Drain To Source On
0.1 Ohm
Resistance, Thermal, Junction To Case
1.62 K⁄W
Temperature, Operating, Maximum
+150 °C
Temperature, Operating, Minimum
-55 °C
Time, Turn-off Delay
23 ns
Time, Turn-on Delay
10 ns
Transconductance, Forward
7.6 mhos
Transistor Type
N Channel Enhancement Mode
Voltage, Breakdown, Drain To Source
100 V
Voltage, Forward, Diode
2.5 V
Voltage, Gate To Source
±20 V
Description:
The NTE66 is a TMOS Power FET in a TO220 type package designed for high voltage, high speed
power switching applications such as switching regulators, converters, solenoid and relay drivers.
Features:
D Lower R
D Improved Inductive Ruggedness
D Fast Switching Times
D Lower Input Capacitance
D Extended Safe Operating Area
D Improved High Temperature Reliability
Absolute Maximum Ratings:
Drain–Source Voltage (T
Drain–Gate Voltage (R
Gate–Source Voltage, V
Continuous Drain Current, I
Pulsed Drain Current (Note 2), I
Pulsed Gate Current, I
Single Pulsed Avalanche Energy (Note 3), E
Avalanche Current, I
Total Power Dissipation (T
Operating Junction Temperature Range, T
Storage Temperature Range, T
Lead Temperature (During Soldering, 1/8” from case, 5sec max.), T
Thermal Resistance, Junction–to–Case, R
Thermal Resistance, Junction–to–Ambient, R
Thermal Resistance, Case–to–Sink (Mounting surface flat, smooth, and greased), R
Note 1. Pulse Test: Pulse Width
Note 2. Repetitive rating: Pulse width limited by max, junction temperature.
Note 3. L = 0.53mH, V
T
T
Derate Above 25 C
C
C
= +25 C
= +100 C
DS(ON)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
AS
GM
GS
dd
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
GS
J
= 1M , T
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= 25V, R
= +25 C to +150 C), V
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
D
= +25 C), P
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
N–Ch, Enhancement Mode
stg
DM
G
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
J
High Speed Switch
300 s, Duty Cycle
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= 25 , Starting T
= +25 C to +125 C), V
D
J
MOSFET
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
JC
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
AS
NTE66
JA
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
DSS
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= +25 C.
2%.
DGR
. . . . . . . . . . . . . . . . . . . . . . . . .
L
. . . . . . . . . . . . . . . . . . .
–55 to +150 C
–55 to +150 C
CS
0.62W/ C
.
1.62K/W
+300 C
0.5K/W
80K/W
69mJ
100V
100V
1.5A
77W
20V
14A
10A
56A
14A
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NTE66 Summary of contents
Page 1
... Description: The NTE66 is a TMOS Power FET in a TO220 type package designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay drivers. Features: D Lower R DS(ON) D Improved Inductive Ruggedness D Fast Switching Times D Lower Input Capacitance D Extended Safe Operating Area ...
Page 2
Electrical Characteristics: (T Parameter Drain–Source Breakdown Voltage Gate Threshold Voltage Gate–Source Leakage, Forward Gate–Source Leakage, Reverse Zero Gate Voltage Drain Current On–State Drain–Source Current Static Drain–Source On–State Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn–On Delay Time ...
Page 3
Dia Max .070 (1.78) Max Gate .100 (2.54) .420 (10.67) Max .110 (2.79) .500 (12.7) Max .250 (6.35) Max .500 (12.7) Min Source Drain/Tab ...