Description:
The NTE66 is a TMOS Power FET in a TO220 type package designed for high voltage, high speed
power switching applications such as switching regulators, converters, solenoid and relay drivers.
Features:
D Lower R
D Improved Inductive Ruggedness
D Fast Switching Times
D Lower Input Capacitance
D Extended Safe Operating Area
D Improved High Temperature Reliability
Absolute Maximum Ratings:
Drain–Source Voltage (T
Drain–Gate Voltage (R
Gate–Source Voltage, V
Continuous Drain Current, I
Pulsed Drain Current (Note 2), I
Pulsed Gate Current, I
Single Pulsed Avalanche Energy (Note 3), E
Avalanche Current, I
Total Power Dissipation (T
Operating Junction Temperature Range, T
Storage Temperature Range, T
Lead Temperature (During Soldering, 1/8” from case, 5sec max.), T
Thermal Resistance, Junction–to–Case, R
Thermal Resistance, Junction–to–Ambient, R
Thermal Resistance, Case–to–Sink (Mounting surface flat, smooth, and greased), R
Note 1. Pulse Test: Pulse Width
Note 2. Repetitive rating: Pulse width limited by max, junction temperature.
Note 3. L = 0.53mH, V
T
T
Derate Above 25 C
C
C
= +25 C
= +100 C
DS(ON)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
AS
GM
GS
dd
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
GS
J
= 1M , T
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= 25V, R
= +25 C to +150 C), V
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
D
= +25 C), P
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
N–Ch, Enhancement Mode
stg
DM
G
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
J
High Speed Switch
300 s, Duty Cycle
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= 25 , Starting T
= +25 C to +125 C), V
D
J
MOSFET
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
JC
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
AS
NTE66
JA
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
DSS
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= +25 C.
2%.
DGR
. . . . . . . . . . . . . . . . . . . . . . . . .
L
. . . . . . . . . . . . . . . . . . .
–55 to +150 C
–55 to +150 C
CS
0.62W/ C
.
1.62K/W
+300 C
0.5K/W
80K/W
69mJ
100V
100V
1.5A
77W
20V
14A
10A
56A
14A