NTE5645 NTE Electronics, Inc., NTE5645 Datasheet
NTE5645
Manufacturer Part Number
NTE5645
Description
TRIAC, Isolated Tab; TO-220; 600 V; 2 mA ( Max.); 10 A; 2.2 V (Max.); 2.5 degC/
Manufacturer
NTE Electronics, Inc.
Datasheet
1.NTE5645.pdf
(2 pages)
Specifications of NTE5645
Channel Type
N
Current, Dc Gate-trigger
50 mA (Max.)
Current, Dc Holding
50 mA (Max.)
Current, Off-state, Peak
2 mA ( Max.)
Current, On-state, Average, Maximum
10 A
Current, On-state, Rms, Maximum
10 A
Current, Surge, Non-repetitive Peak Forward
100 A
Dissipation, Gate-power, Average
200 mW
Package Type
TO-220
Resistance, Thermal, Junction To Case
2.5 °C⁄W
Temperature, Operating, Maximum
150 °C
Temperature, Operating, Minimum
-40 °C
Voltage, Dc Gate-trigger
2.5 V (Max.)
Voltage, Drop, On-state, Maximum
2.2 V (Max.)
Voltage, Repetitive Peak Off State
600
Description:
The NTE5645 is an 10 Amp TRIAC in a TO220 type package designed to be driven directly with IC
and MOS devices and features proprietary, void–free glass passivated chips.
This device is a bi–directional triode thyristor and may be switched from off–state to conduction for
either polarity of applied voltage with positive or negative gate trigger current. The NTE5645 is de-
signed for control applications in lighting, heating, cooling and static switching relays.
Absolute Maximum Ratings:
Repetitive Peak Off–State Voltage (Gate Open, T
RMS On–State Current (T
Peak Surge (Non–Repetitive) On–State Current (One Cycle, 50Hz or 60Hz), I
Peak Gate–Trigger Current (3 s Max), I
Peak Gate–Power Dissipation (I
Average Gate–Power Dissipation, P
Operating Temperature Range, T
Storage Temperature Range, T
Typical Thermal Resistance, Junction–to–Case, R
Electrical Characteristics: (T
Peak Off–State Current
Max. On–State Voltage
DC Holding Current
Critical Rate–of–Rise of Off–State
DC Gate Trigger Current
Voltage
T
T
2
2
(+) Gate (+), T
(+) Gate (–), T
Parameter
2
2
(–) Gate (+)
(–) Gate (–)
C
= +75 C, Conduction Angle of 180 C), I
stg
C
GT
= +25 C, Maximum Ratings unless otherwise specified)
J
Symbol
Critical
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
I
dv/dt
V
DRM
I
G(AV)
I
GT
TM
H
I
GTM
GTM
TRIAC – 10A
Isolated Tab
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
for 3 s Max), P
NTE5645
V
I
Gate Open
V
V
T
DRM
D
D
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= 14A
= 600V, Gate Open, T
= 12V, R
= 600V, Gate Open, T
J
thJC
= +100 C), V
Test Conditions
L
= 30
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
GM
. . . . . . . . . . . . . . . . . . . . . . . . . . .
C
DRM
= +100 C
J
= +100 C
T(RMS)
. . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . .
TSM
Min Typ Max Unit
–
–
–
–
–
–
. . . . . . . . .
–40 to +150 C
–40 to +100 C
–
–
–
5
–
–
2.2
50
50
80
2
–
2.5 C/W
200mW
600V
100A
V/ s
mA
mA
mA
mA
40W
10A
V
4A
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NTE5645 Summary of contents
Page 1
... Description: The NTE5645 Amp TRIAC in a TO220 type package designed to be driven directly with IC and MOS devices and features proprietary, void–free glass passivated chips. This device is a bi–directional triode thyristor and may be switched from off–state to conduction for either polarity of applied voltage with positive or negative gate trigger current. The NTE5645 is de- signed for control applications in lighting, heating, cooling and static switching relays ...
Page 2
Electrical Characteristics (Cont’d): (T Parameter DC Gate Trigger Voltage Gate–Controlled Turn–On Time .147 (3.75) Dia Max .070 (1.78) Max = +25 C, Maximum Ratings unless otherwise specified) C Symbol Test Conditions 12V ...