NTE2387 NTE Electronics, Inc., NTE2387 Datasheet
NTE2387
Manufacturer Part Number
NTE2387
Description
MOSFET, Power; N-Ch; VDSS 800V; RDS(ON) 2.7 Ohms; ID 4A; PD 125W; VGS +/-30V; gFS 4.3Mh
Manufacturer
NTE Electronics, Inc.
Datasheet
1.NTE2387.pdf
(2 pages)
Specifications of NTE2387
Application
For high speed switch
Channel Type
N-Channel
Current, Drain
4 A
Fall Time
40 ns (Typ.)
Operating And Storage Temperature
-55 to +150 °C
Polarization
N-Channel
Power Dissipation
125 W
Resistance, Drain To Source On
2.7 Ohms
Resistance, Thermal, Junction To Case
1 °C⁄W (Max.)
Temperature, Operating, Maximum
+150 °C
Thermal Resistance, Junction To Ambient
60 °C⁄W
Time, Rise
25 ns (Typ.)
Time, Turn-off Delay
130 ns
Time, Turn-on Delay
10 ns
Transconductance, Forward
4.3 Mhos
Voltage, Breakdown, Drain To Source
800 V
Voltage, Drain To Gate
800 V
Voltage, Forward, Diode
1 V
Voltage, Gate To Source
±30 V
Absolute Maximum Ratings:
Drain–Source Voltage, V
Drain–Gate Voltage (R
Gate–Source Voltage, V
Pulsed Drain Current, I
Continuous Drain Current, I
Total Dissipation (T
Operating Junction Temperature, T
Storage Temperature Range, T
Maximum Thermal Resistance, Junction–to–Case, R
Typical Thermal Resistance, Junction–to–Ambient, R
Electrical Characteristics: (T
Static Characteristics
Drain–Source Breakdown Voltage
Zero–Gate Voltage Drain Current
Gate–Body Leakage Current
Gate Threshold Voltage
Static Drain–Source On Resistance
Dynamic Characteristics
Forward Transconductance
Input Capactiance
Output Capacitance
Reverse Transfer Capactiance
Turn–On Time
Rise Time
Turn–Off Delay Time
Fall Time
T
T
C
C
= +25 C
= +100 C
Parameter
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= +25 C), P
GS
DM
GS
DS
= 20k ), V
N–Channel Enhancement Mode,
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
D
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
stg
C
tot
= +25 C unless otherwise specified)
V
Symbol
R
V
(BR)DSS
t
t
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
I
I
C
DS(on)
C
GS(th)
C
d(on)
d(off)
GSS
High Speed Switch
DSS
g
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
oss
t
t
iss
rss
DGR
fs
r
f
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
I
V
V
V
V
V
V
V
V
R
NTE2387
MOSFET
D
GS
GS
DS
DS
GS
DS
DS
DD
GS
= 250 A, V
= 0, V
= 0, V
= V
= 25V, I
= 25V, V
= 0, V
= 10V, I
= 30V, I
= 50 , R
GS
Test Conditions
DS
GS
DS
, I
D
thJC
D
D
D
thJA
GS
= 800V, T
GS
= 800V, T
= 30V
= 1.5A
= 1.5A
= 2.3A, V
gen
= 1mA
= 0, f = 1MHz
= 0
= 50
. . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . .
C
C
GS
= +125 C
= +25 C
= 10V,
Min
800
2.1
3.0
–
–
–
–
–
–
–
–
–
–
–
1000
Typ
130
0.1
3.0
2.7
4.3
10
80
30
10
25
40
–
2
–55 to +150 C
1250
Max
100
120
150
1.0
4.0
3.0
20
50
25
40
60
–
–
1.0 C/W
60 C/W
+150 C
125W
Unit
mho
800V
800V
mA
4.0A
2.5A
nA
ns
ns
ns
ns
pf
pf
pf
V
V
30V
16A
A
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NTE2387 Summary of contents
Page 1
... Rise Time Turn–Off Delay Time Fall Time NTE2387 MOSFET High Speed Switch . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...
Page 2
Electrical Characteristics (Cont’d): (T Parameter Dynamic Characteristics (Cont’d) Internal Drain Inductance Internal Source Inductance Source–Drain Diode Ratings and Characteristics Continuous Reverse Drain Current Pulsed Reverse Drain Current Diode Forward Voltage Reverse Recovery Time Reverse Recovered Charge .147 (3.75) Dia Max ...