NTE2396 NTE Electronics, Inc., NTE2396 Datasheet
NTE2396
Manufacturer Part Number
NTE2396
Description
MOSFET; N-Ch; VDSS 100V; RDS(ON) 0.077Ohm; ID 28A; TO-220; PD 150W; VGS +/-20V; Qg 69nC
Manufacturer
NTE Electronics, Inc.
Datasheet
1.NTE2396.pdf
(3 pages)
Specifications of NTE2396
Application
High speed switch
Channel Type
N-Channel
Current, Drain
28 A
Fall Time
48 ns (Typ.)
Gate Charge, Total
69 nC
Operating And Storage Temperature
-55 to +175 °C
Package Type
TO-220
Polarization
N-Channel
Power Dissipation
150 W
Resistance, Drain To Source On
0.077 Ohm
Resistance, Thermal, Junction To Case
1 °C⁄W
Temperature, Operating, Maximum
+175 °C
Temperature, Operating, Minimum
-55 °C
Thermal Resistance, Junction To Ambient
62 °C⁄W
Time, Rise
77 ns (Typ.)
Time, Turn-off Delay
40 ns
Time, Turn-on Delay
13 ns
Transconductance, Forward
5.8 Mhos
Voltage, Breakdown, Drain To Source
100 V
Voltage, Forward, Diode
2.5 V
Voltage, Gate To Source
±20 V
Features:
D Dynamic dv/dt Rating
D Repetitive Avalanche Rated
D Current Sense
D +175 C Operating Temperature
D Fast Switching
D Ease of Paralleling
D Simple Drive Requirements
Absolute Maximum Ratings:
Continuous Drain Current (V
Pulsed Drain Current (Note 1), I
Power Dissipation (T
Gate–to–Source Voltage, V
Single Pulse Avalanche Energy (Note 2), E
Avalanche Current (Note 1), I
Repetitive Avalanche Energy (Note 1), E
Peak Diode Recovery dv/dt (Note 3), dv/dt
Operating Junction Temperature Range, T
Storage Temperature Range, T
Lead Temperature (During Soldering, 1.6mm from case for 10sec), T
Mounting Torque (6–32 or M3 Screw)
Thermal Resistance, Junction–to–Case, R
Thermal Resistance, Junction–to–Ambient, R
Typical Thermal Resistance, Case–to–Sink (Flat, Greased Surface), R
Note 1. Repetitive rating; pulse width limited by maximum junction temperature.
Note 2. V
Note 3. I
T
T
Derate Linearly Above 25 C
C
C
SD
= +25 C
= +100 C
DD
= 25V, starting T
28A, di/dt
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
C
= +25 C), P
170A/ s, V
GS
GS
AR
J
N–Ch, Enhancement Mode
stg
= +25 C, L = 191 H, R
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= 10V), I
DM
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
D
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
High Speed Switch
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
DD
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
D
AR
J
thJC
V
NTE2396
MOSFET
AS
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
(BR)DSS
thJA
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
, T
J
G
= 25 , I
+175 C
AS
= 28A
L
thCS
. . . . . . . . . . . . . . . . .
. . . . . . . . . . . .
10 lbfin (1.1Nm)
–55 to +175 C
–55 to +175 C
1.0W/ C
1.0 C/W
0.5 C/W
62 C/W
5.5V/ns
+300 C
100mJ
150W
15mJ
110A
28A
20A
20V
28A
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NTE2396 Summary of contents
Page 1
... Thermal Resistance, Junction–to–Ambient, R Typical Thermal Resistance, Case–to–Sink (Flat, Greased Surface), R Note 1. Repetitive rating; pulse width limited by maximum junction temperature. Note 25V, starting T DD Note 3. I 28A, di/dt 170A NTE2396 MOSFET N–Ch, Enhancement Mode High Speed Switch = 10V ...
Page 2
Electrical Characteristics: (T Parameter Drain–to–Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain–to–Source On–Resistance Gate Threshold Voltage Forward Transconductance Drain–to–Source Leakage Current Gate–to–Source Forward Leakage Gate–to–Source Reverse Leakage Total Gate Charge Gate–to–Source Charge Gate–to–Drain (“Miller”) Charge Turn–On Delay Time Rise ...
Page 3
Dia Max .070 (1.78) Max Gate .100 (2.54) .420 (10.67) Max .110 (2.79) .500 (12.7) Max .250 (6.35) Max .500 (12.7) Min Source Drain/Tab ...