MT41J256M8HX-15E IT:D Micron Technology Inc, MT41J256M8HX-15E IT:D Datasheet - Page 32

• Manufacturer Part Number: MT41J256M8HX-15E IT:D
• Description: MICMT41J256M8HX-15E_IT:D 2GB DDR3 SDRAM
• Manufacturer: Micron Technology Inc
• Type: DDR3 SDRAMr

Specifications of MT41J256M8HX-15E IT:D

• Organization: 256Mx8
• Address Bus: 18b
• Maximum Clock Rate: 1.333GHz
• Operating Supply Voltage (typ): 1.5V
• Package Type: FBGA
• Operating Temp Range: -40C to 95C
• Operating Supply Voltage (max): 1.575V
• Operating Supply Voltage (min): 1.425V
• Supply Current: 165mA
• Pin Count: 78
• Mounting: Surface Mount
• Operating Temperature Classification: Industrial
• Lead Free Status / Rohs Status: Compliant

Electrical Specifications – I
Table 9: Timing Parameters Used for I
PDF: 09005aef826aaadc
2Gb_DDR3_SDRAM.pdf – Rev. K 04/10 EN
I
ter
t
CL I
t
I
t
t
I
t
t
t
I
t
CK (MIN) I
RCD (MIN)
DD
RC (MIN) I
RAS (MIN)
DD
RP (MIN)
FAW
RRD
DD
RFC
DD
DD
Parame-
x4, x8
x16
x4, x8
x16
1Gb
2Gb
4Gb
DD
DD
5-5-5
-25E
120
20
15
16
20
44
64
DDR3-800
5
5
5
4
4
2.5
6-6-6
120
-25
21
15
16
20
44
64
Within the following I
are used, unless stated otherwise:
• LOW: V
• Midlevel: Inputs are V
• R
• R
• R
• Qoff is enabled in MR1
• ODT is enabled in MR1 (R
• TDQS is disabled in MR1
• External DQ/DQS/DM load resister is 25Ω to V
• Burst lengths are BL8 fixed
• AL equals 0 (except in I
• I
• Input slew rate is specified by AC parametric test conditions
• Optional ASR is disabled
• Read burst type uses nibble sequential (MR0 [3] 0)
• Loop patterns must be executed at least once before current measurements begin
6
6
6
4
4
DD
ON
TT,nom
TT(WR)
specifications are tested after the device is properly initialized
Electrical Specifications – I
set to RZQ/7 (34Ω)
-187E
7-7-7
160
DDR3-1066
27
20
20
27
59
86
7
7
7
4
6
IN
set to RZQ/2 (120Ω)
set to RZQ/6 (40Ω)
1.875
≤ V
IL(AC)max
DD
8-8-8
DD
-187
160
28
20
20
27
59
86
8
8
8
4
6
Measurements – Clock Units
Specifications and Conditions Definitions
DD
; HIGH: V
REF
measurement tables, the following definitions and conditions
DD7
9-9-9
-15E
107
200
33
24
20
30
74
9
9
9
4
5
= V
DDR3-1333
TT,nom
)
32
DD
1.5
IN
/2
10-10-10
) and MR2 (R
≥ V
-15
107
200
10
10
34
24
10
20
30
74
4
5
IH(AC)min
Micron Technology, Inc. reserves the right to change products or specifications without notice.
DD
10-10-10
-125E
Specifications and Conditions
TT(WR)
128
240
10
10
38
28
10
24
32
88
5
6
DDQ
DDR3-1600
/2
1.25
)
11-11-11
-125
128
240
11
11
39
28
11
24
32
88
5
6
© 2006 Micron Technology, Inc. All rights reserved.
DDR3-1866
13-13-13
-107
1.07
103
150
281
13
13
45
32
13
26
33
5
6
Definitions
Units
CK
CK
CK
CK
CK
CK
CK
CK
CK
CK
CK
CK
ns