MT48H8M16LFB4-75 IT:J TR Micron Technology Inc, MT48H8M16LFB4-75 IT:J TR Datasheet - Page 28

• Manufacturer Part Number: MT48H8M16LFB4-75 IT:J TR
• Manufacturer: Micron Technology Inc
• Type: Mobile SDRAMr

Specifications of MT48H8M16LFB4-75 IT:J TR

• Organization: 8Mx16
• Density: 128Mb
• Address Bus: 14b
• Access Time (max): 8/5.4ns
• Maximum Clock Rate: 133MHz
• Operating Supply Voltage (typ): 1.8V
• Package Type: VFBGA
• Operating Temp Range: -40C to 85C
• Operating Supply Voltage (max): 1.95V
• Operating Supply Voltage (min): 1.7V
• Supply Current: 70mA
• Pin Count: 54
• Mounting: Surface Mount
• Operating Temperature Classification: Industrial
• Lead Free Status / Rohs Status: Compliant

Figure 11:
PRECHARGE
PDF: 09005aef832ff1ea/Source: 09005aef832ff1ac
sdr_mobile_sdram_cmd_op_timing_dia_fr10_08__3.fm - Rev. E 4/09 EN
WRITE Command
Notes:
1. EN AP = enable auto precharge, DIS AP = disable auto precharge
The PRECHARGE command is used to deactivate the open row in a particular bank or
the open row in all banks. The bank(s) will be available for a subsequent row access a
specified time (
whether one or all banks are to be precharged, and in the case where only one bank is to
be precharged, inputs BA0 and BA1 select the bank. Otherwise BA0 and BA1 are treated
as “Don’t Care.” After a bank has been precharged, it is in the idle state and must be acti-
vated prior to any READ or WRITE commands being issued to that bank. Figure 12 on
page 29 shows the PRECHARGE command.
BA0, BA1
Address
RAS#
CAS#
A10
WE#
CKE
CLK
CS#
1
HIGH
t
RP) after the precharge command is issued. Input A10 determines
Valid address
Column address
Bank address
DIS AP
128Mb: 8 Meg x 16, 4 Meg x 32 Mobile SDRAM
EN AP
28
Don’t Care
Micron Technology, Inc., reserves the right to change products or specifications without notice.
©2008 Micron Technology, Inc. All rights reserved.
Commands