MT47H64M16HR-3 IT:HTR Micron Technology Inc, MT47H64M16HR-3 IT:HTR Datasheet - Page 86
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MT47H64M16HR-3 IT:HTR
Manufacturer Part Number
MT47H64M16HR-3 IT:HTR
Description
Manufacturer
Micron Technology Inc
Type
DDR2 SDRAMr
Specifications of MT47H64M16HR-3 IT:HTR
Organization
64Mx16
Density
1Gb
Address Bus
16b
Access Time (max)
450ps
Maximum Clock Rate
667MHz
Operating Supply Voltage (typ)
1.8V
Package Type
FBGA
Operating Temp Range
-40C to 85C
Operating Supply Voltage (max)
1.9V
Operating Supply Voltage (min)
1.7V
Supply Current
135mA
Pin Count
84
Mounting
Surface Mount
Operating Temperature Classification
Industrial
Lead Free Status / Rohs Status
Compliant
On-Die Termination (ODT)
Off-Chip Driver (OCD) Impedance Calibration
Posted CAS Additive Latency (AL)
PDF: 09005aef821ae8bf
1GbDDR2.pdf – Rev. W 7/11 EN
ODT effective resistance, R
Figure 37 (page 84). The ODT feature is designed to improve signal integrity of the
memory channel by allowing the DDR2 SDRAM controller to independently turn on/off
ODT for any or all devices. R
lectable and apply to each DQ, DQS/DQS#, RDQS/RDQS#, UDQS/UDQS#, LDQS/
LDQS#, DM, and UDM/LDM signals. Bits (E6, E2) determine what ODT resistance is en-
abled by turning on/off “sw1,” “sw2,” or “sw3.” The ODT effective resistance value is se-
lected by enabling switch “sw1,” which enables all R1 values that are 150 each, ena-
bling an effective resistance of 75 (R
R2 values that are 300 each, enable an effective ODT resistance of 150
(R
of 50 . Reserved states should not be used, as an unknown operation or incompatibility
with future versions may result.
The ODT control ball is used to determine when R
ODT has been enabled via bits E2 and E6 of the EMR. The ODT feature and ODT input
ball are only used during active, active power-down (both fast-exit and slow-exit
modes), and precharge power-down modes of operation.
ODT must be turned off prior to entering self refresh mode. During power-up and initi-
alization of the DDR2 SDRAM, ODT should be disabled until the EMR command is is-
sued. This will enable the ODT feature, at which point the ODT ball will determine the
R
HIGH until eight clocks after the EMR has been enabled (see Figure 80 (page 131) for
ODT timing diagrams).
The OFF-CHIP DRIVER function is an optional DDR2 JEDEC feature not supported by
Micron and thereby must be set to the default state. Enabling OCD beyond the default
settings will alter the I/O drive characteristics and the timing and output I/O specifica-
tions will no longer be valid (see Initialization (page 90) for proper setting of OCD de-
faults).
Posted CAS additive latency (AL) is supported to make the command and data bus effi-
cient for sustainable bandwidths in DDR2 SDRAM. Bits E3–E5 define the value of AL, as
shown in Figure 37. Bits E3–E5 allow the user to program the DDR2 SDRAM with an AL
of 0, 1, 2, 3, 4, 5, or 6 clocks. Reserved states should not be used as an unknown opera-
tion or incompatibility with future versions may result.
In this operation, the DDR2 SDRAM allows a READ or WRITE command to be issued
prior to
using this feature would set AL =
is held for the time of the AL before it is issued internally to the DDR2 SDRAM device.
RL is controlled by the sum of AL and CL; RL = AL + CL. WRITE latency (WL) is equal to
RL minus one clock; WL = AL + CL - 1 ×
(page 87). An example of a WL is shown in Figure 39 (page 87).
TT(EFF)
TT2[EFF]
value. Anytime the EMR enables the ODT function, ODT may not be driven
t
RCD (MIN) with the requirement that AL
= R2/2). Switch “sw3” enables R1 values of 100 , enabling effective resistance
TT(EFF)
TT
86
effective resistance values of 50 , and 150 are se-
t
, is defined by bits E2 and E6 of the EMR, as shown in
RCD (MIN) - 1 ×
TT2 [EFF]
Micron Technology, Inc. reserves the right to change products or specifications without notice.
t
CK. An example of RL is shown in Figure 38
Extended Mode Register (EMR)
= R2/2). Similarly, if “sw2” is enabled, all
1Gb: x4, x8, x16 DDR2 SDRAM
t
TT(EFF)
CK. The READ or WRITE command
t
RCD (MIN). A typical application
is turned on and off, assuming
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