MT47H64M16HR-3 IT:HTR Micron Technology Inc, MT47H64M16HR-3 IT:HTR Datasheet - Page 22

• Manufacturer Part Number: MT47H64M16HR-3 IT:HTR
• Manufacturer: Micron Technology Inc
• Type: DDR2 SDRAMr

Specifications of MT47H64M16HR-3 IT:HTR

• Organization: 64Mx16
• Density: 1Gb
• Address Bus: 16b
• Access Time (max): 450ps
• Maximum Clock Rate: 667MHz
• Operating Supply Voltage (typ): 1.8V
• Package Type: FBGA
• Operating Temp Range: -40C to 85C
• Operating Supply Voltage (max): 1.9V
• Operating Supply Voltage (min): 1.7V
• Supply Current: 135mA
• Pin Count: 84
• Mounting: Surface Mount
• Operating Temperature Classification: Industrial
• Lead Free Status / Rohs Status: Compliant

FBGA Package Capacitance
Table 4: Input Capacitance
PDF: 09005aef821ae8bf
1GbDDR2.pdf – Rev. W 7/11 EN
Parameter
Input capacitance: CK, CK#
Delta input capacitance: CK, CK#
Input capacitance: Address balls, bank address balls, CS#, RAS#, CAS#, WE#, CKE, ODT
Delta input capacitance: Address balls, bank address balls, CS#, RAS#, CAS#, WE#, CKE,
ODT
Input/output capacitance: DQ, DQS, DM, NF
Delta input/output capacitance: DQ, DQS, DM, NF
Notes:
1. This parameter is sampled. V
2. The capacitance per ball group will not differ by more than this maximum amount for
3.
4. Reduce MAX limit by 0.25pF for -25, -25E, and -187E speed devices.
5. Reduce MAX limit by 0.5pF for -3, -3E, -25, -25E, and -187E speed devices.
T
balls, reflecting the fact that they are matched in loading.
any given device.
C
C are not pass/fail parameters; they are targets.
= 25°C, V
OUT(DC)
= V
DDQ
/2, V
22
DD
OUT
= 1.8V ±0.1V, V
(peak-to-peak) = 0.1V. DM input is grouped with I/O
Micron Technology, Inc. reserves the right to change products or specifications without notice.
1Gb: x4, x8, x16 DDR2 SDRAM
DDQ
= 1.8V ±0.1V, V
Symbol Min Max Units Notes
C
C
C
C
C
DCK
C
DIO
CK
IO
DI
I
‹ 2007 Micron Technology, Inc. All rights reserved.
1.0
1.0
2.5
–
–
–
REF
= V
0.25
0.25
2.0
2.0
4.0
0.5
SS
Packaging
, f = 100 MHz,
pF
pF
pF
pF
pF
pF
2, 3
1, 4
2, 3
1, 5
2, 3
1